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Memory device, memory unit and control method thereof

A memory unit and memory device technology, applied in hardware monitoring, instrumentation, error detection/correction, etc., can solve the problems of reading memory cell data reading errors, drift, programming interference reading, etc.

Active Publication Date: 2021-04-27
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the threshold voltage of the memory cell will drift due to various reasons, such as program disturbance, read disturbance, temperature disturbance and data retention
This kind of drift will lead to reading errors in reading the data of the memory cells, resulting in the loss of reliability of the memory device

Method used

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  • Memory device, memory unit and control method thereof
  • Memory device, memory unit and control method thereof
  • Memory device, memory unit and control method thereof

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings to refer to the same or like elements.

[0033] figure 1 is a block diagram of a memory device 100 according to an exemplary embodiment. The memory device 100 includes a memory unit 110 and a controller 120 , and the controller 120 is communicatively coupled to the memory unit 110 .

[0034] The memory unit 110 includes an array of memory cells 112 , a storage device 114 and a state machine 116 . The memory cell 112 can be a NOR flash memory cell, a NAND flash memory cell, a phase-change memory (phase-change, PCM) cell, a static random access memory (static random access memory, SRAM) cell, a dynamic random access memory ( dynamic random access memory...

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Abstract

The invention discloses a memory unit, including: a memory unit, including a plurality of memory cells; a controller, including a storage unit, storing a plurality of operation options, each operation option corresponding to at least one selected memory cell in the plurality of memory cells A property.

Description

technical field [0001] The invention relates to a memory device including a memory unit and a method for controlling the memory unit through a controller in the memory device. Background technique [0002] The memory device includes a plurality of memory cells to store data. The data stored in the memory cell is determined by the threshold voltage of the memory cell. However, the threshold voltage of the memory cell may drift due to various reasons, such as program disturbance, read disturbance, temperature disturbance and data retention. This kind of drift will lead to reading errors in reading the data of the memory cells, resulting in loss of reliability of the memory device. Contents of the invention [0003] According to an embodiment of the present disclosure, a memory device is proposed, including: a memory unit including a plurality of memory cells; and a controller including a storage unit storing a plurality of operation options, each of which corresponds to t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C16/34
CPCG11C16/10G11C16/3418G11C16/0483G11C16/3431G11C16/3495G06F11/3055G06F11/3034G06F11/34G06F3/0604G06F3/0619G06F3/0652G06F3/0659G06F3/0679
Inventor 洪俊雄陈汉松陈重光
Owner MACRONIX INT CO LTD