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Manufacturing method of fin field effect transistor

A technology of fin field effect transistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as performance needs to be improved

Active Publication Date: 2020-07-10
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] With the continuous development of semiconductor technology, the performance of fin field effect transistors manufactured using photoresist masks as masks for doping processes in the prior art needs to be improved

Method used

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  • Manufacturing method of fin field effect transistor
  • Manufacturing method of fin field effect transistor
  • Manufacturing method of fin field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] It can be seen from the background art that the performance of the fin field effect transistor manufactured in the prior art needs to be improved.

[0032] Taking the formation process of the light source and drain doped region (LDD, Lightly Doped Drain) of the fin field effect transistor as an example to analyze, combined with reference figure 1 and figure 2 , figure 1 It is the scanning electron microscope picture of the fin field effect transistor, figure 2 for figure 1 In the local scanning electron microscope diagram, the forming process of the LDD includes: providing a substrate 10 with several discrete fins 11 on the substrate 10, and a plurality of gates 12 formed on the substrate 10, each gate 12 Across at least one fin 11, and each gate 12 covers part of the top and sidewall of the fin 11; a photoresist layer 13 is formed on the top of the gate 12 and the substrate 10 between adjacent gates 12 , the photoresist layer 13 covers part of the surface of the ...

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PUM

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Abstract

A method for manufacturing a fin field effect transistor, comprising: forming a photoresist film on a base, a fin and a gate, the top of the photoresist film is higher than the top of the gate, and the separation between the exposed area and the non-exposed area The boundary line is located between adjacent gates; exposing the photoresist film in the exposed area; performing post-exposure baking treatment on the photoresist film, so that the photoacid in the second area diffuses into the non-exposed area lower than the gate In the photoresist film on the top; develop the photoresist film, remove the photoresist film below the top of the gate in the exposed area and the non-exposed area, and keep the photoresist above the top of the gate in the non-exposed area The film is used as a photoresist layer; the exposed fins are functionally doped using the photoresist layer as a mask. The invention improves the electrical performance of the formed fin field effect transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a fin field effect transistor. Background technique [0002] In the manufacturing process of integrated circuits, the preparation of chips is generally divided into steps such as deposition, grinding, photolithography, etching, diffusion and doping. Among them, the photolithography technology dissolves some areas on the photoresist through steps such as exposure, development, fixing, and film hardening to form a photoresist mask with a layout pattern. [0003] The photoresist mask can be used as a mask for the doping process, and the regions not protected by the photoresist mask are doped. The photoresist mask can also be used as a pattern transfer mask, and the pattern of the photoresist mask is transferred to the silicon wafer through the etching process, specifically, the surface material of the silicon wafer without the protecti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/027
CPCH01L21/0271H01L29/66795H01L21/0273H01L21/823814H01L21/823821H01L21/26586H01L21/823418H01L21/823431H01L21/823437H01L27/0886H01L29/66492H01L29/7833
Inventor 易旭东
Owner SEMICON MFG INT (SHANGHAI) CORP