Multi-chip parallel half-bridge type IGBT module

Abstract

The invention discloses a multi-chip parallel half-bridge type IGBT module. The module comprises a heat conduction base plate and a ceramic copper-clad substrate, wherein the ceramic copper-clad substrate is provided with chips and bonding leads for connection, the chips form an upper leg and a lower leg, each leg comprises at least two IGBT chips, each IGBT chip is attached with a freewheeling diode to form an IGBT chip unit, the IGBT chip units forming each leg are vertically parallelly arranged on the ceramic copper-clad substrate, grids of all the IGBT chips of each leg point to the same directions, and the grid of each IGBT chip is connected with a grid bonding point on the ceramic copper-clad substrate through one independent bonding lead and is further connected with grid copper bars of the corresponding upper leg and the corresponding lower leg through clad copper or the bonding leads.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a design and implementation method for parallel connection of multiple chips inside an insulated gate bipolar transistor (IGBT) module. Background technique [0002] IGBT can not only withstand high voltage and provide high current, but also is easy to control. It is an important power device for motor control and power inverter. IGBT single chip, due to the limitation of chip size, the output current of a single chip usually does not exceed 200A. In order to control greater power, the output current of hundreds or even thousands of amperes can be obtained by parallel connection of multiple IGBT chips inside the power module. Therefore, the size of the IGBT module is flexible and changeable, and multiple IGBT chips can be integrated to obtain a large current output capability, which has been widely used in the industrial field. However, due to th...

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Problems solved by technology

However, due to the geometric size of the chip itself, as well as the limitation of the internal wiring and interconnection area of ​​the power module, it will cause a large distributed inductance inside the power module

This will lead to multiple IGBT chips connected in parallel. When turning on and off, the current borne by each IGBT chip will be unbalanced.

In severe cases, when the current borne by individual chips will far exceed that of other chips, when the device is running, the IGBT will be continuously turned on and off, which will cause its junction temperature to be much higher than other chips with lower currents.

In this case, the IGBT chip, which bears high current during switching, will greatly reduce reliability due to its high junction temperature, which will easily cause early damage to the module

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