Plasma processing machine and its radio frequency window temperature control system and temperature control method
A window temperature and control system technology, applied in the field of temperature detection, can solve the problems of wasting electric power, unfavorable process control and repeatability, increasing costs, etc., and achieve the effects of reducing cost, benefiting publicity and repeatability, and saving electric energy.
Active Publication Date: 2020-12-29
ADVANCED MICRO FAB EQUIP INC CHINA
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Problems solved by technology
Therefore, during the preparation process of the first wafer and subsequent wafers, the temperature of the RF window is different, which is not conducive to process control and repeatability
[0004] 2) In the absence of cooling requirements, the fan still works at a standard speed, resulting in waste of power and increased costs
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[0030] Specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
[0031] Such as figure 1 As shown, an embodiment of a radio frequency window temperature control system is disclosed. The control system is set on a plasma etching machine (such as a TSV etching machine). The control system includes: a temperature probe 110, a fan controller 120 , a fan 130 , a main control circuit 140 , a human-computer interaction device 160 , a DC power supply 170 and a radio frequency filter (RF filter) 180 .
[0032] The temperature probe 110 is placed close to or attached to the RF window 150 of the TSV etching machine for collecting actual temperature information of the RF window.
[0033] The input end of the RF filter 180 is connected to the output end of the temperature probe 110; the output end of the RF filter 180 is divided into two outputs, and the temperature probe 110 is divided into two outputs, which are connec...
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The invention discloses a radio frequency window temperature control system. The control system comprises a temperature probe which is arranged close to a radio frequency window and collects the actual temperature information of the radio frequency window, a fan controller which is connected with the temperature probe and receives the actual temperature information of the radio frequency window, and a fan which is connected with the output end of the fan controller and driven to run by the power output by the fan controller and controls the temperature of the radio frequency window. The fan controller outputs a power for controlling the running of the fan to the fan according to a preset radio frequency window temperature instruction in order to make the actual temperature of the radio frequency window meet a preset radio frequency window temperature. The temperature probe arranged on the radio frequency window can monitor the actual temperature of the radio frequency window in real time, and the power of the fan can be controlled according to the actual temperature of the radio frequency window. Therefore, the temperature of the radio frequency window of a through-silicon via etching machine can be controlled through the fan, and the temperature of the radio frequency window can be kept consistent in the etching process. The technology can be known widely, and is of high repeatability.
Description
technical field [0001] The invention relates to a temperature detection technology in semiconductor preparation, in particular to a plasma processing machine and its radio frequency window temperature control system and temperature control method. Background technique [0002] In the prior art, the temperature of the TSV RF window cannot be controlled, and only two fans are used to cool the window. The two fans are set at a standard speed, no matter in the reaction chamber idle (chamber idle), low source RF power (low source RF power) or high source RF power (high source power), the fans work at the same speed . Such a design has the following problems: [0003] 1) When the window is running the process after a long period of idleness, the temperature of the RF window (RF window) is the lowest during the first wafer preparation process (waferprocessing). Then the window is heated to a stable temperature by radio frequency power (RFpower) for a certain period of time. The...
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IPC IPC(8): H01L21/67H01L21/66G05D23/19
CPCG05D23/19H01L21/67011H01L21/67248H01L22/12
Inventor 马冬叶
Owner ADVANCED MICRO FAB EQUIP INC CHINA