Linear anisotropic magnetoresistive sensor and preparation method thereof

Abstract

The invention belongs to the technical field of magnetic material and components, and particularly provides a linear anisotropic magnetoresistive sensor and a preparation method thereof. N parallelogram reluctance bars which are not connected and N-1-N+1 parallelogram conductive layers which are not connected are laid on the same horizontal plane of a substrate in a mutually staggered mode. The reluctance bars are enabled to be electrically connected through the embedded conductive layers so that the current direction of all the reluctance parts is enabled to be identical and clear, and the noise of the output electric signals can be obviously reduced. The conductive layers embedded in the reluctance bars can change the current direction without the basis of thickness so that the thicknessof the whole device can be reduced and the structural stability can be enhanced. Finally the thinner conductive layers and the less noise of the output signals can be realized under the premise of guaranteeing the current offset effect.

Description

technical field [0001] The invention belongs to the technical field of magnetic materials and components, in particular to a linear anisotropic magnetoresistance sensor and a preparation method thereof. Background technique [0002] Anisotropic magnetoresistance effect (AMR, Anisotropic Magnetoresistance) means that in magnetic materials (such as NiFe, CoFe, Co, etc.), when the angle between the magnetic moment of the magnetic material and the current changes, the resistance of the material also changes. The phenomenon. The size R of the anisotropic magnetoresistance satisfies: R=R 0 +ΔRcos2θ, where R 0 is the resistance value under zero magnetic field; ΔR is the maximum change value of anisotropic magnetoresistance; θ is the angle between the current direction and the magnetization direction of the magnetic layer. The linear anisotropic magnetoresistive sensor is based on the anisotropic magnetoresistance effect. Under specific preparation conditions, the orientation of ...

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Problems solved by technology

[0006] In view of the above existing problems or deficiencies, in order to realize the technical problems of the linear anisotropic magnetoresistive sensor under the premise of ensuring the current bias effect, the conductive layer is thinner and the output signal noise is less; the present invention provides a linear anisotropic magnetoresistive sensor. Magnetoresistive sensor and its preparation method

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