Epoxy molding compound for high power soic semiconductor packaging applications
An epoxy molding and compound technology, which is used in semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., and can solve problems such as being unsuitable for high-voltage applications.
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[0091] The method for preparing the epoxy molding compound of the invention is not particularly limited. In a preferred embodiment, the epoxy molding compound is prepared by a process comprising the following steps:
[0092] (1) Accurately weigh each component and mix it in a high-speed mixer for 20-30 minutes;
[0093] (2) Add liquid additives to the mixer and continue mixing for 15-20 minutes,
[0094] (3) Pass the mixed material through a twin-screw extruder, and knead the extruded material at 90-110°C,
[0095] (4) Finally the material is cooled and ground.
[0096] The epoxy molding compounds of the present invention are useful for packaging IC devices.
[0097] Epoxy molding compounds for IC devices can be cured by conventional molding methods such as transfer molding, compression molding, etc.
Embodiment 1
[0155] Polyaromatic epoxy resin (MAR), 5.2%
[0156] Phenol biphenyl aralkyl resin, 3.8%
[0157] Spherical silica, 87.2%
[0158] Gamma-glycidyloxytrimethoxy and mercaptopropyltrimethoxysilanes, 0.7%
[0159] Release agent, 0.6%
[0160] Epoxidized Silicone Glycidyl Resin Type Low Stress Modifier, 0.5%
[0161] Anion Ion Scavenger, 0.5%,
[0162] Organophosphorus flame retardant, 1%
[0163] Carbon pigment, 0.3%
[0164] Triphenylphosphine derivative, 0.2%
Embodiment 2
[0166] Polyaromatic epoxy resin (MAR), 5.2%
[0167] Phenol biphenyl aralkyl resin, 3.8%
[0168] Spherical silica, 87.2%
[0169] Gamma-glycidyloxytrimethoxy and mercaptopropyltrimethoxysilanes, 0.7%
[0170] Release agent, 0.6%
[0171] Epoxidized Silicone Glycidyl Resin Type Low Stress Modifier, 0.5%
[0172] Anion Ion Scavenger, 0.5%,
[0173] Organophosphorus flame retardant, 1%
[0174] Carbon pigment, 0.3%
[0175] 2-Phenyl-4-methylimidazole curing accelerator, 0.2%
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