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DC bias regulator for cascode amplifier

An amplifier and regulator technology, applied in the direction of amplifiers, amplifier types, RF amplifiers, etc., can solve the problems of inapplicable cascode amplifiers and no compensation.

Pending Publication Date: 2018-06-08
RAYTHEON CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this DC bias regulator is a passive DC bias regulator circuit and therefore does not provide compensation for manufacturing process, temperature and external DC bias voltage variations
Two Active DC Bias Regulators in U.S. Patent Nos. 5,506,544 to Staudinger et al., entitled "Bias Circuit for Depletion ModeField Effect Transistors," issued April 9, 1996 and June 14, 2011 Described in U.S. Patent No. 7,961,049 to Busking et al., titled "Amplifier with compensated gate bias"; although these two DC bias regulators do compensate for variations in process conditions, they are specific to common source FETs , and are used to maintain a constant drain current through a single FET, not for cascode amplifiers with a pair of FETs

Method used

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  • DC bias regulator for cascode amplifier
  • DC bias regulator for cascode amplifier
  • DC bias regulator for cascode amplifier

Examples

Experimental program
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Embodiment Construction

[0042] now refer to image 3 , the amplifier 10 is shown with a pair of transistors, here a FET with the same overall gate width, a CS FET and a CG FET (Wg_cs = Wg_cg), arranged as a cascode amplifier 12 as shown, and a DC Bias regulator 14. As shown, the pair of transistors CS FET and CG FET of cascode amplifier 10 are connected in series between a first voltage source Vdd and ground potential. As shown, the input RF signal is fed to the gate of the CS FET for amplification by amplifier 10 to generate the output RF signal at the drain of the CG_FET.

[0043] In order for the voltage Vds_cs between the source (S) and drain (D) electrodes of the CG FET to be equal to the voltage Vds_cg between the source (S) and drain (D) electrodes of the CS FET, Vd_cs needs to be equal to Vdd / 2 (Assume Vdd=Vd_cg, ie RF choke L1 separating Vdd and Vd_cg has zero DC resistance). Note that in this common notation, (A) since Vs_cs=0, Vds_cs=Vd_cs-Vs_cs=Vd_cs, and (B) Vds_cg=Vd_cg-Vs_cg=Vdd-Vd_c...

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PUM

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Abstract

An amplifier having a pair of transistors arranged in a cascode amplifier arrangement serially connected to a first voltage source. A DC bias regulator is provided having: a DC bias circuit for producing a reference voltage at a control electrode of a first one of the pair of transistors: and a voltage combiner having a pair of inputs, a first of the pair of inputs being coupled to the reference voltage and a second one of the pair of inputs being coupled to the first voltage source. The DC bias regulator produces a DC bias voltage at a control electrode of a second one of the pair of transistors related to a combination of the reference voltage and the first voltage source.

Description

technical field [0001] The present disclosure relates generally to cascode amplifiers and, more particularly, to DC bias regulators for cascode amplifiers. Background technique [0002] Cascode amplifiers may be formed using field effect transistors (FETs) or bipolar junction transistors (BJTs), as is known in the art. In the case of a FET, the gate is used as a control electrode for controlling the flow of carriers between the source and drain electrodes, and in the case of a BJT, the base is used as a control electrode to control the flow of charge carriers between the source and drain electrodes. and the flow of carriers between the drain. Therefore, it should be noted that although a FET cascode amplifier is described, this material could be equally applied to a BJT. Therefore, the gate electrode of the FET is equivalent to the base electrode of the BJT; referred to herein as the control electrode of the transistor. In a similar manner, the terms drain and source for ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/22H03F1/30H03F1/08H03F3/193
CPCH03F1/086H03F1/223H03F3/193H03F2200/18H03F2200/181H03F2200/411H03F2200/447H03F2200/451H03F1/301H03F1/0222H03F2200/504H03F2200/72H03F2200/75
Inventor V·S·卡佩尔
Owner RAYTHEON CO