Method for manufacturing semiconductor chip with anti-light interference

Abstract

The invention provides a method for manufacturing a semiconductor chip that prevents light interference, comprising: making metal wiring and pads on the surface of a silicon substrate; covering the first passivation on the surface of the metal wiring and the pads layer; forming a light-shielding layer on the surface of the first passivation layer; forming a second passivation layer on the surface of the light-shielding layer; Etching to form a wiring opening on the surface of the pad. The reliability and stability of the semiconductor chip can be improved by adopting the method provided by the invention, the process is relatively simple and the overall manufacturing cost can be effectively reduced.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a method for manufacturing a semiconductor chip that prevents light interference. 【Background technique】 [0002] For some semiconductor chips, it is used in the occasion where there is light irradiation. At this time, the light irradiation on the chip will cause abnormal operation of the chip. Such as light-emitting diode (LED) drive control chip, LED lamp is to package several LED chips and LED drive control chip together in transparent epoxy resin. The leakage current of the lower drive control chip will increase, resulting in abnormal function of some control chips. Due to the increase of leakage current, it is manifested as abnormal operation of the LED lamp. [0003] In order to solve this problem, there is currently a method: by growing a layer of metal, such as aluminum (Al), on the surface of the passivation layer, and then etching this layer ...

AI Technical Summary

Problems solved by technology

[0005] 1. The metal layer on the surface of the passivation layer is exposed, which is easy to cause some short circuits, such as the short circuit between the metal connection wire and the metal layer on the surface of the passivation layer when packaging and wiring

[0006] 2. During the storage and transportation of chips, the metal layer on the surface of the passivation layer is easy to combine with water vapor in the air, causing corrosion

[0007] 3. For the metal on the surface of the passivation layer, in order to make the opening window of the passivation layer smaller than the opening window of the light-shielding metal layer, separate photolithography, etching, and glue removal steps are required, and the process is complicated

[0008] 4. Due to the increase of the metal on the surface of the passivation layer and a series of processes, the manufacturing cost is relatively high

Images