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Simple preparation method of lead sulfide sensitized indium tin oxide photoelectric cathode

An indium tin oxide and photocathode technology, which is applied to photovoltaic power generation, circuits, electrical components, etc., can solve problems such as poor matching and poor photocathode performance, and achieve the effects of reducing preparation cost, increasing photocurrent, and simple preparation method.

Inactive Publication Date: 2018-06-22
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, PbS has a high optical coefficient and a narrow band gap, which can effectively absorb visible light and has been widely studied. However, when it is used in the preparation of semiconductor photocathode, there is a poor match between the position of the valence band and the traditional hole-conducting layer, resulting in Problems with poor photocathode performance

Method used

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  • Simple preparation method of lead sulfide sensitized indium tin oxide photoelectric cathode
  • Simple preparation method of lead sulfide sensitized indium tin oxide photoelectric cathode
  • Simple preparation method of lead sulfide sensitized indium tin oxide photoelectric cathode

Examples

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Effect test

Embodiment 1

[0030] Example 1 The preparation method of lead sulfide sensitized indium tin oxide photocathode

[0031] (1) Cleaning of conductive matrix FTO glass: first cut the large piece of FTO glass into small pieces of 10mm×20mm, then weigh a certain quality of potassium hydroxide, add an appropriate amount of isopropanol to prepare 2molL -1 Potassium hydroxide isopropanol solution, put the FTO conductive glass cut earlier into the solution, boil it for 20 minutes under reflux, then take it out and ultrasonicate twice in deionized water, acetone and ethanol, each time Fifteen minutes, take it out and dry it in a drying oven at 110°C for 20 minutes, take it out for use.

[0032] (2) Preparation of indium tin oxide thin film: use the spin coating method to cover the indium tin oxide spin coating liquid on the FTO conductive glass, and prepare the FTO / ITO thin film electrode.

[0033] (3) Synthesis and deposition of lead sulfide on the indium tin oxide film: the deposition of lead sulfi...

Embodiment 2

[0036] Embodiment 2: Lcy-Pb in aqueous solution 2+ and S 2- Effect of Concentration on Photocathode Materials

[0037] (1) Cleaning of conductive matrix FTO glass: first cut the large piece of FTO glass into small pieces of 10mm×20mm, then weigh a certain quality of potassium hydroxide, add an appropriate amount of isopropanol to prepare 2molL -1 Potassium hydroxide isopropanol solution, put the FTO conductive glass cut earlier into the solution, boil it for 20 minutes under reflux, then take it out and ultrasonicate twice in deionized water, acetone and ethanol, each time Fifteen minutes, take it out and dry it in a drying oven at 110°C for 20 minutes, take it out for use.

[0038] (2) Preparation of indium tin oxide thin film: use the spin coating method to cover the indium tin oxide spin coating liquid on the FTO conductive glass, and prepare the FTO / ITO thin film electrode.

[0039] (3) Synthesis and deposition of lead sulfide on the indium tin oxide film: the depositio...

Embodiment 3

[0043] Embodiment 3: the influence of FTO glass immersion time, times on electric cathode material

[0044] (1) Cleaning of conductive matrix FTO glass: first cut the large piece of FTO glass into small pieces of 10mm×20mm, then weigh a certain quality of potassium hydroxide, add an appropriate amount of isopropanol to prepare 2molL -1 The isopropanol solution of potassium hydroxide puts the FTO conductive glass cut earlier into the solution, boils it under reflux for 20 minutes, then takes it out and ultrasonicates twice in deionized water, acetone and ethanol, each Fifteen minutes at a time, take it out and dry it in a drying oven at 110°C for 20 minutes, take it out and set aside.

[0045] (2) Preparation of indium tin oxide thin film: use the spin coating method to cover the indium tin oxide spin coating liquid on the FTO conductive glass, and prepare the FTO / ITO thin film electrode.

[0046] (3) Synthesis and deposition of lead sulfide on the indium tin oxide film: the d...

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Abstract

The invention discloses a simple preparation method of a lead sulfide sensitized indium tin oxide photoelectric cathode and belongs to the technical field of material science and photocatalytic hydrogen production. The method is characterized in that a simple spin coating method is used to coat an FTO conductive glass substrate with hole conduction layer indium tin oxide, and then an ion layer adsorption method is used to load lead sulfide onto the indium tin oxide to prepare the lead sulfide sensitized indium tin oxide photoelectric cathode. The method has the advantages that the non-noble metal raw materials are used, the method is simple, and the photoelectric currents of the prepared lead sulfide sensitized indium tin oxide photoelectric cathode are increased effectively.

Description

technical field [0001] The invention relates to a simple preparation method of a lead sulfide-sensitized indium tin oxide photocathode, which belongs to the field of material science and technology and the field of photoelectric catalytic hydrogen production. Background technique [0002] The increasing severity of the global energy crisis has drawn the attention of countries all over the world in the research of new energy sources. Among them, hydrogen is considered to be the most ideal energy carrier because of its abundant sources, clean and non-polluting, and high-efficiency combustion. Hydrogen production by splitting water is one of the important methods to achieve large-scale production of hydrogen. Using solar energy to decompose water to produce hydrogen and converting solar energy into chemical energy stored in hydrogen energy provides a cheap and convenient way to obtain hydrogen. Semiconductor photocathode is the key to photoelectrochemical hydrogen production....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/52H01L51/56
CPCH10K30/82H10K50/828H10K71/00Y02E10/549
Inventor 董玉明夏世彬王光丽蒋平平赵爽
Owner JIANGNAN UNIV