Substrate dry etching device

Abstract

The invention relates to a substrate dry etching device which comprises an upper electrode plate, a lower electrode plate and at least two groups of support protruding parts, wherein the upper electrode plate and the lower electrode plate are spaced oppositely; multiple moving holes and multiple air holes are formed in the lower electrode plate; each group of support protruding parts comprises multiple support protruding parts, and each support protruding part is movably inserted into a moving hole; the support protruding parts protrude from the surface of the lower electrode plate at the samemaximum height; each group of support protruding parts is used for protruding alternately at the maximum height in an etching process; and only one group of support protruding parts protrudes at themaximum height at any moment. At different moments, a big plate resists different support protruding parts at different positions, so as to effectively prevent the support protruding parts from long resisting the same position of the big plate during the etching, and effectively prevent bad spots on the big plate; and moreover, the accumulation of reaction resultants also can be avoided, the generation probability of the bad spots is reduced, and the yield of the big plate is increased.

Description

technical field [0001] The invention relates to the technical field of organic light-emitting display manufacturing, in particular to a substrate dry etching device. Background technique [0002] Dry etching (Dry Etching) is a technology for etching thin films with plasma, which is widely used in semiconductor technology, thin film transistor liquid crystal display and OLED (Organic Light-Emitting Diode, Organic Light-Emitting Diode) display manufacturing technology. During the manufacturing process of an organic light emitting diode LTPS (Low Temperature Poly-silicon, low temperature polysilicon) array substrate, dry etching is usually used to remove the film on the surface of the substrate to form the desired circuit pattern. During the dry etching process, the high-frequency voltage partially ionizes the reactive gas into plasma, and an electric field is formed between the upper electrode and the lower electrode that cooperate with each other. Etching is performed. [0...

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Problems solved by technology

[0004] However, the cooling effect is different at the position where the support protrusion is in contact with the substrate compared with other positions on the substrate that are not in contact with the support protrusion, and defective spots (mura) are likely to occur at the position where the support protrusion contacts the lower surface of the substrate , causing defects in the substrate

In addition, due to the large top area of ​​the support protrusions, during the etching process, the support protrusions are easy to accumulate reaction products between the contact areas with the lower surface of the substrate, which not only reduces the adsorption capacity of the support protrusions to the substrate , which further increases the area of ​​defective spots in the contact area, and increases the probability of occurrence of defective spots, which in turn affects the process quality of the product

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