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Infrared image sensor

An infrared image and sensor technology, applied in image communication, instruments, scientific instruments, etc., can solve the problems of image visibility degradation and achieve the effect of improving image visibility

Inactive Publication Date: 2018-06-29
SILICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, semiconductor materials used to absorb light in the infrared band in infrared image sensors have small band gaps, and thus may generate dark currents from thermally excited electrons
This dark current acts as noise in the image sensor, thereby degrading the image visibility of the sensor

Method used

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Examples

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Embodiment Construction

[0044] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and descriptions should be regarded as illustrative in nature rather than restrictive, and like reference numerals refer to like elements throughout the specification. Also, detailed descriptions of well-known related arts will be omitted.

[0045] In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Also, when an element is referred to...

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Abstract

An exemplary embodiment of the present invention provides an infrared image sensor including: a sensor pixel connected with a data lead-out line and a scan line disposed on a surface of a substrate; awavelength converter positioned in the sensor pixel and disposed in an internal movement path of infrared rays, including an anti-Stokes material that absorbs infrared rays and converts them into visible rays to emit them; and a photosensor part positioned in the sensor pixel to sense the visible rays converted by the wavelength converter.

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit from Korean Patent Application No. 10-2016-0170559 filed on December 14, 2016 at the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. technical field [0003] This application relates to infrared image sensors. Background technique [0004] Image sensors are devices that capture images by using the property of semiconductors to react to light. In recent years, with the development of the computer industry and the communication industry, in various fields such as digital cameras, scanners, video cameras, personal communication systems (PCS), game equipment, optical cameras, and medical miniature cameras, the performance image sensor. [0005] In Korean Patent Publication No. 10-2016-0036249 relating to an image sensor using infrared rays, the image sensor disclosed therein includes: a backlight unit; a visible ray conve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14625H01L27/14649H01L27/14607H01L27/14636H01L27/14629H01L27/14616G01J1/58H10K39/32G01J5/48H01L27/146H01L27/14612H04N5/33G01J1/4228
Inventor 金宰慜金基中刘珍亨许智镐
Owner SILICON DISPLAY TECH CO LTD
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