A method for improving quantum efficiency in light-emitting diodes
A technology of internal quantum efficiency and light emitting diode, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of insignificant improvement of internal quantum efficiency, and achieve the effects of improving quantum efficiency, reducing stress, and weakening piezoelectric polarization.
Inactive Publication Date: 2020-06-19
江苏清联光电技术研究院有限公司
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However, the improvement of the internal quantum efficiency in this way is still not obvious.
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Embodiment 1
[0037] Such as figure 1 Shown, at first, carry out step S1, provide a substrate 1, as figure 2 shown. The material of the substrate 1 is sapphire. In other embodiments, the substrate 1 can also be a gallium nitride substrate, a silicon substrate or a silicon carbide substrate. The size of the substrate 1 is two inches, four inches or six inches, and a patterned substrate or a flat sheet is selected. .
[0038] Then, proceed to step S2, forming a first contact layer 2 on the substrate 1, such as image 3 shown. The first contact layer 2 is an N-type doped gallium nitride layer, and the first contact layer 2 is used to form the cathode of the light emitting diode. In other embodiments, the first contact layer 2 can also be used to form the anode of the light emitting diode.
[0039] In actual production, a buffer layer 12 will be grown between the substrate 1 and the first contact layer 2, such as Figure 4 shown. The material of the buffer layer 12 is GaN, AlN or AlGaN...
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Abstract
The invention provides a method for improving quantum efficiency in a light-emitting diode. The method comprises the following steps: providing a substrate; sequentially forming a first contact layer,an active layer and a second contact layer on the substrate, wherein the active layer comprises quantum well layers and quantum barrier layers periodically laminated, and a ratio of growth velocity is 1 to (0.90 to 1.10) when at least one of any one quantum well layer and one corresponding quantum barrier layer adjacent to each other is formed, and the quantum well layers and quantum barrier layers adjacent to each other are continuously formed. According to the method disclosed by the invention, through the growth velocity with smaller difference, after formation of the quantum well layers is finished, the quantum barrier layers are directly formed, so that continuous growth is realized, state switching is not needed, contact interface stress and piezoelectric polarization are reduced, and the quantum efficiency in the light-emitting diode is improved.
Description
technical field [0001] The invention relates to the technical field of lighting, in particular to a method for improving the quantum efficiency in a light-emitting diode. Background technique [0002] As a solid-state light source, GaN-based LEDs have become the focus of R&D and industry attention in the international semiconductor and lighting fields due to their advantages of high brightness, high efficiency, long life, energy saving and environmental protection, and small size. The internal quantum efficiency of the LED structure has a decisive impact on its brightness and luminous efficiency. Therefore, the most fundamental way to improve the luminous efficiency of LED epitaxial wafers is to improve the internal quantum efficiency of the epitaxial structure, and the crystal quality of the active layer has a great influence on the internal quantum efficiency. The improvement of the quantum effect is particularly important. [0003] At present, the InGaN / GaN multi-quantum...
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IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/0075H01L33/06H01L33/325
Inventor 李丹丹
Owner 江苏清联光电技术研究院有限公司