Preparation method and application of cdznte thin film and aln/cdznte based ultraviolet photodetector
An ultraviolet light and thin film technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem that the forbidden band width cannot guarantee the normal use of ultraviolet detectors, so as to save production costs, improve production efficiency, The effect of strong light response
Active Publication Date: 2020-06-26
SHANGHAI UNIV
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Problems solved by technology
In the selection of substrate materials, traditional materials such as Si and GaAs cannot guarantee the normal use of ultraviolet detectors under extreme conditions such as high temperature and strong radiation due to their narrow bandgap.
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[0026] Below in conjunction with specific implementation example, above-mentioned scheme is described further, and preferred embodiment of the present invention is described in detail as follows:
[0027] In this embodiment, a method for growing a CdZnTe film based on an AlN substrate comprises the following steps:
[0028] a. Preparation of AlN substrate:
[0029] Using AlN powder with a purity of 98wt.% as the raw material, the particle size of the AlN powder is 1 μm, and the specific surface area of the AlN powder is 3.4㎡ / g, and the AlN powder is dry pressed for the first time under the condition of 1.5MPa. Then dry press again under the condition of 180MPa oil pressure to obtain the AlN biscuit, and then in the nitrogen-hydrogen mixed atmosphere environment, and under normal pressure, the high-temperature sintering method is used to prepare the bulk AlN ceramics, and then the obtained bulk AlN The ceramic is ground and cut to a thickness of 1 mm, and then the surface of...
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Abstract
The invention provides a preparation method of CdZnTe thin film, a preparation method of AlN / CdZnTe-based ultraviolet light detector, an application of the CdZnTe thin film, and an application of theAlN / CdZnTe-based ultraviolet light detector. The CdZnTe thin film is grown based on an AlN substrate, and the AlN / CdZnTe-based ultraviolet light detector is prepared based on the AlN substrate. The preparation method of the AlN / CdZnTe-based ultraviolet light detector comprises five main steps of preparation of the AlN substrate, preparation of a CdZnTe polycrystalline sublimation source, pretreatment of the substrate, growth process of the CdZnTe thin film, and electrode fabrication of the AlN / CdZnTe-based ultraviolet light detector. By adopting the preparation method of the CdZnTe thin film,the large-area and high-quality CdZnTe thin film can be grown on the AlN substrate rapidly, the AlN substrate can guarantee the application of the AlN / CdZnTe-based ultraviolet light detector in an extreme environment, and the prepared composite structure has strong photoresponse to ultraviolet light.
Description
technical field [0001] The invention relates to a preparation process and application of a crystal material, in particular to a preparation process and application of a CdZnTe thin film, which is applied in the technical field of inorganic non-metallic material manufacturing process. Background technique [0002] Ultraviolet light refers to electromagnetic radiation with a wavelength range of 10nm-400nm, and its name comes from the fact that its spectrum is outside of violet light in visible light. The ultraviolet light in nature mainly comes from sunlight. When sunlight passes through the atmosphere, ultraviolet rays with a wavelength shorter than 290nm will be absorbed by the atmosphere. Most artificial ultraviolet light sources are gas arc discharges. With the development of science and technology, ultraviolet detection technology is more and more widely used in civilian and military fields. In the civil field, ultraviolet detection technology can be applied to such as f...
Claims
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IPC IPC(8): H01L31/18H01L31/0296H01L31/109
CPCH01L31/02966H01L31/109H01L31/1832H01L31/1836Y02P70/50
Inventor 沈悦徐宇豪张宗坤顾峰黄健王林军
Owner SHANGHAI UNIV