Oxide semiconductor thin film transistor, preparation method thereof, and array substrate
A technology for oxide semiconductors and thin film transistors, which is used in semiconductor/solid-state device manufacturing, transistors, semiconductor devices, etc., can solve the problems of poor stability of oxide thin film transistors, avoid poor stability, reduce costs, and meet current stability. desired effect
Active Publication Date: 2018-07-10
TRULY HUIZHOU SMART DISPLAY
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Problems solved by technology
[0005] The present invention provides an oxide semiconductor thin film transistor and its preparation method, and an array substrate, which solves the following technical problems: by adding an additional capacitor structure at the bottom, and through the overlapping structure of the overlapping electrodes, a photolithography step is omitted, Simplify the process and reduce the cost, and the capacitive structure at the bottom acts as a light shielding layer to avoid the problem of poor stability of the oxide thin film transistor caused by external ambient light
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Embodiment 1
[0043] like Figures 1-A to 1-K As shown, one aspect of this embodiment relates to an oxide semiconductor thin film transistor, which includes a first oxide semiconductor thin film transistor, a second oxide semiconductor thin film transistor to an Nth oxide semiconductor thin film transistor (not shown in the figure), The first oxide semiconductor thin film transistor includes a substrate 1, a first electrode 2 of a capacitor formed in sequence on the substrate 1, a capacitor insulating layer 3, a second electrode 4 serving as a gate capacitor, a gate insulating layer 5, an oxide electrode Source layer 6, etching barrier layer 7, source-drain electrodes and lap electrodes 8, passivation layer 9, flat layer 10, anode 11; wherein the etching barrier layer 7 forms a first via hole, and the etching barrier layer 7 and the gate The polar insulating layer 5 is formed with a second via hole, and the etching barrier layer 7, the gate insulating layer 5 and the capacitor insulating la...
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The invention provides an oxide semiconductor thin film transistor, a preparation method thereof, and an array substrate. A first thin film transistor includes a substrate, a first electrode of a capacitor, a capacitor insulating layer, a second electrode as the grid electrode of the capacitor, a grid electrode insulating layer, an oxide active layer, an etching barrier layer, source and drain electrodes, an overlap electrode, a passivation layer, a flat layer and an anode, wherein the etching barrier layer forms a first through hole; the etching barrier and the grid electrode insulating layerform second through holes; the etching barrier layer, the grid electrode insulating layer and the capacitor insulating layer also form third through holes; and the overlap electrode of the first oxide semiconductor thin film transistor is in overlap joint with the first electrode of the capacitor, the second electrode as the as the grid electrode of the capacitor, and the source electrode of thesecond or Nth oxide thin film transistor. By adding an extra capacitor structure at the bottom and by setting the overlap electrode, the oxide semiconductor thin film transistor has the advantages ofsaving one time of photoetching step, simplifying the working process, and reducing the cost. Besides, as the capacitor structure at the bottom is used as a light shielding layer, the problem that theexternal environmental light causes low stability of the oxide thin film transistor.
Description
technical field [0001] The invention relates to an oxide thin film transistor and the related technical field of preparation thereof, in particular to an oxide semiconductor thin film transistor, a preparation method thereof, and an array substrate. Background technique [0002] With the advent of the information age, displays are accelerating their development towards flat panelization and energy saving. Flat Panel Display (FPD) is currently the most popular type of display device. The most widely used technology in the field of flat panel display is the thin film transistor (Thin Film Transistor, TFT) technology. The active layer material of the current mainstream thin film transistor technology is Si material, including amorphous silicon, polycrystalline silicon, and the like. However, amorphous silicon thin film transistors have poor stability and low mobility, while polysilicon thin film transistors have poor preparation uniformity and high cost due to the existence o...
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IPC IPC(8): H01L29/786H01L21/77H01L21/336
CPCH01L21/77H01L29/66265H01L29/78618
Inventor 林振国铃木浩司谢志强任思雨苏君海李建华
Owner TRULY HUIZHOU SMART DISPLAY