A kind of oxide semiconductor thin film transistor and its preparation method, array substrate

Abstract

The present invention provides an oxide semiconductor thin film transistor and its preparation method, and a substrate array. The first thin film transistor includes a substrate, a first electrode of a capacitor, a capacitor insulating layer, a second electrode of a capacitor serving as a gate, a gate insulating layer, Oxide active layer, etch barrier layer, source and drain electrodes and bonding electrodes, passivation layer, planar layer, anode; wherein the etch barrier layer forms the first via hole, and the etch barrier layer and the gate insulating layer form a The second via hole, the etch stop layer, the gate insulating layer and the capacitor insulating layer are also formed with a third via hole; the bonding electrode of the first oxide semiconductor thin film transistor and the first electrode of the capacitor, as the gate The second electrode of the capacitor is overlapped with the source of the second or Nth oxide thin film transistor. By adding an additional capacitive structure at the bottom, and by setting a bonding electrode, a photolithography step is saved, the process is simplified, and the cost is reduced, and the capacitive structure at the bottom is used as a light shielding layer to avoid external ambient light that leads to the stability of the oxide thin film transistor. problem of poor sex.

Description

technical field [0001] The present invention relates to the technical fields related to oxide thin film transistors and their preparation, in particular to oxide semiconductor thin film transistors, their preparation methods, and array substrates. Background technique [0002] With the advent of the information age, displays are accelerating towards flat panelization and energy saving. A flat panel display (Flat Panel Display, FPD) is currently the most popular type of display device. The most widely used technology in the field of flat panel display is thin film transistor (Thin Film Transistor, TFT) technology. The active layer material of the current mainstream thin film transistor technology is Si material, including amorphous silicon, polycrystalline silicon, and the like. However, amorphous silicon thin film transistors have poor stability and low mobility, while polycrystalline silicon thin film transistors have poor preparation uniformity and high cost due to the e...

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Problems solved by technology

[0005] The present invention provides an oxide semiconductor thin film transistor and its preparation method, and an array substrate, which solves the following technical problems: by adding an additional capacitor structure at the bottom, and through the overlapping structure of the overlapping electrodes, a photolithography step is omitted, Simplify the process and reduce the cost, and the capacitive structure at the bottom acts as a light shielding layer to avoid the problem of poor stability of the oxide thin film transistor caused by external ambient light

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