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Nano-crystal, preparation method and semiconductor device

A nanocrystal and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems that the luminous performance needs to be improved, cannot meet the requirements of quantum dot materials for semiconductor devices, etc., and can meet the comprehensive performance requirements and high luminous efficiency. Effect

Active Publication Date: 2018-07-10
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a nanocrystal, a preparation method and a semiconductor device, aiming at solving the problem that the luminescence performance of the existing quantum dot materials needs to be improved and cannot meet the requirements of semiconductor devices for quantum dot materials. The problem

Method used

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  • Nano-crystal, preparation method and semiconductor device
  • Nano-crystal, preparation method and semiconductor device
  • Nano-crystal, preparation method and semiconductor device

Examples

Experimental program
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Effect test

Embodiment 1

[0110] Embodiment 1: Preparation based on CdZnSeS / CdZnSeS quantum dots

[0111] The precursors of cation Cd, cation Zn, anion Se and anion S are injected into the reaction system to form Cd y Zn 1-y Se b S 1-b Layer (where 0≤y≤1, 0≤b≤1); continue to inject the precursors of cation Cd, cation Zn, anion Se and anion S into the reaction system, in the above Cd y Zn 1-y Se b S 1-b Cd z Zn 1-z Se c S 1-c layer (where 0≤z≤1, and z is not equal to y, 0≤c≤1); under certain reaction conditions such as heating temperature and heating time, Cd and The exchange of Zn ions; because the migration distance of cations is limited and the probability of migration is smaller the farther the migration distance is, so it will be in Cd y Zn 1-y Se b S 1-b layer with Cd z Zn 1-z Se c S 1-c A graded alloy composition distribution of Cd content and Zn content is formed near the interface of the layer, that is, Cd x Zn 1-x Se a S 1-a , where 0≤x≤1, 0≤a≤1.

Embodiment 2

[0112] Embodiment 2: Preparation based on CdZnS / CdZnS quantum dots

[0113] The precursors of cation Cd, cation Zn and anion S are injected into the reaction system to form Cd y Zn 1-y S layer (where 0≤y≤1); continue to inject the precursor of cation Cd, the precursor of cation Zn and the precursor of anion S into the reaction system, the above Cd y Zn 1-y Cd formed on the surface of the S layer z Zn 1-z S layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals (that is, the above two-layer compound) occurs ; Since the migration distance of cations is limited and the farther the migration distance is, the probability of migration is smaller, so the Cd y Zn 1-y S layer and Cd z Zn 1-z A gradual alloy composition distribution of Cd content and Zn content is formed near the interface of the S layer, that is, Cd x Zn 1-x S, where 0≤x≤1....

Embodiment 3

[0114] Embodiment 3: Preparation based on CdZnSe / CdZnSe quantum dots

[0115] The precursors of cation Cd, cation Zn and anion Se are injected into the reaction system first to form Cd y Zn 1-y Se layer (where 0≤y≤1); continue to inject the precursor of cation Cd, the precursor of cation Zn and the precursor of anion Se into the reaction system, the above Cd y Zn 1-y Cd formed on the surface of the Se layer z Zn 1-z Se layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals occurs; due to the limited migration distance of cations And the farther the migration distance is, the smaller the probability of migration will be, so it will be in Cd y Zn 1-y Se layer and Cd z Zn 1-z A graded alloy composition distribution of Cd content and Zn content is formed near the interface of the Se layer, that is, Cd x Zn 1-x Se, where 0≤x≤1.

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Abstract

The invention discloses a nano-crystal, a preparation method and a semiconductor device. The nano-crystal includes S central structure units in the center and N encircle structure units outside the center. The central structure units and the encircle structure units are all quantum dot structure units. The central structure units are gradual-changing component structures that gradually become great in energy level width in a radial direction. The N encircle structure units are formed by M first encircle structure units and (N-M) second encircle structure units. The M first encircle structure units are uniform component structures that are consistent in energy level width in a radial direction, and the second encircle structure units are gradual-changing alloy component structures that gradually become great in energy level width from inside to outside in a radial direction. At least one first encircle structure unit is positioned between the second encircle structure units and the central structure units. The adjacent central structure units are continuous in energy level, and the adjacent second encircle structure units are also continuous in energy level.

Description

technical field [0001] The invention relates to the field of nano crystals, in particular to a nano crystal, a preparation method and a semiconductor device. Background technique [0002] Quantum dots are a special material that is confined to the order of nanometers in three dimensions. This remarkable quantum confinement effect makes quantum dots have many unique nanometer properties: continuously adjustable emission wavelength, narrow emission wavelength, Broad absorption spectrum, high luminous intensity, long fluorescence lifetime and good biocompatibility, etc. These characteristics make quantum dots have broad application prospects in flat panel display, solid state lighting, photovoltaic solar energy, biomarkers and other fields. Especially in flat panel display applications, quantum dot light-emitting diodes (Quantum dot light-emitting diodes, QLEDs) based on quantum dot materials have made great progress in display image quality, device performance, and manufactur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/16H01L33/00
CPCH01L33/0087H01L33/06H01L33/16H01L2933/0033H01L33/00
Inventor 刘政杨一行钱磊
Owner TCL CORPORATION