Polyamide acid, polyimide, polyamide acid solution, polyimide laminate, flexible device substrate, and production methods thereof

A polyamic acid, polyimide technology, applied in chemical instruments and methods, sustainable manufacturing/processing, semiconductor/solid-state device components, etc., can solve problems such as damage to inorganic components, film bending, etc., and achieve low thermal expansion. Transparency and transparency, low birefringence effect

Active Publication Date: 2018-07-17
KANEKA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, if these electronic components (inorganic components) made of inorganic materials are formed on a thin film, due to the difference in the linear thermal expansion coefficien

Method used

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  • Polyamide acid, polyimide, polyamide acid solution, polyimide laminate, flexible device substrate, and production methods thereof
  • Polyamide acid, polyimide, polyamide acid solution, polyimide laminate, flexible device substrate, and production methods thereof
  • Polyamide acid, polyimide, polyamide acid solution, polyimide laminate, flexible device substrate, and production methods thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0156] (Example 1)

[0157]

[0158] In a 500 mL glass separable flask equipped with a stirrer with a stainless steel stirrer and a nitrogen inlet tube, 32.0 g of organosilicon sol NMP-ST-R2 (manufactured by Nissan Chemical Industry Co., Ltd., dispersion medium NMP, nano-silica content of 30 parts by weight, average particle size of 10-15nm) and 64.0g of NMP and stirred. After that, 9.6 g of a 1% NMP solution of 3-aminopropyltriethoxysilane (hereinafter sometimes referred to as γ-APS) was added, and the mixture was stirred at 25°C for 1 hour, thereby implementing nano-silica Interface processing. Add 9.7g of 3,5-diaminobenzoic acid (hereinafter sometimes referred to as 3,5-DABA) to this solution and stir to dissolve it, and then add 14.3g of 1R,2S,4S,5R-cyclohexane Alkyltetracarboxylic dianhydride (hereinafter sometimes referred to as PMDA-HS) was stirred for 12 hours, thereby obtaining a polyamic acid solution (reaction solution) containing nano-scale silica. Regarding the bl...

Example Embodiment

[0163] (Example 2)

[0164]

[0165] In a 500 mL glass separable flask equipped with a stirrer with a stainless steel stir bar and a nitrogen introduction tube, 32.0 g of the organosilica sol NMP-ST-R2 and 64.0 g of NMP were added and stirred. After that, 9.6 g of a 1% NMP solution of γ-APS was added, and the mixture was stirred at 25° C. for 1 hour, thereby performing interface treatment of nano-scale silica. Add 4.4g of 3,5-DABA to this solution and stir to dissolve it, then add 6.6g of 4,4'-diamino (N-phenylbenzamide) (hereinafter sometimes referred to as DABA) and stir 1 hour. After that, 13.0 g of PMDA-HS was added and stirred for 12 hours, thereby obtaining a polyamic acid solution (reaction solution) containing nano-sized silica. Regarding the blending ratio of each monomer, if all diamine components are 100 mol%, PMDA-HS is 100 mol%, 3,5-DABA is 50 mol%, and DABA is 50 mol%. In addition, relative to 100 mol% of polyamic acid Parts by weight, the content of nano-scale s...

Example Embodiment

[0168] (Example 3)

[0169]

[0170] In a 500 mL glass separable flask equipped with a stirrer with a stainless steel stir bar and a nitrogen introduction tube, 32.0 g of the organosilica sol NMP-ST-R2 and 64.0 g of NMP were added and stirred. After that, 9.6 g of a 1% NMP solution of γ-APS was added, and the mixture was stirred at 25° C. for 1 hour, thereby performing interface treatment of nano-scale silica. 1.7 g of 3,5-DABA was added to this solution and dissolved, and then 10.0 g of DABA was added and stirred for 1 hour. After that, 12.3 g of PMDA-HS was added and stirred for 12 hours, thereby obtaining a polyamic acid solution (reaction solution) containing nano-scale silica. Regarding the blending ratio of each monomer, if all diamine components are 100 mol%, PMDA-HS is 100 mol%, 3,5-DABA is 20 mol%, and DABA is 80 mol%. In addition, relative to 100 mol% of polyamic acid Parts by weight, the content of nano-scale silica is 40 parts by weight. Here, regarding the compoun...

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Abstract

Provided are: a nanosilica-containing polyamide acid which contains nanosilica and a polyamide acid that is a polymer of an alicyclic tetracarboxylic acid dianhydride and an aromatic diamine having acarboxyl group, and which has heat resistance, low thermal expansion properties, excellent transparency and low birefringence; and a nanosilica-containing polyimide. Also provided is a product or member which meets the requirements of high heat resistance and high transparency by using the above-described nanosilica-containing polyamide acid and nanosilica-containing polyimide.

Description

technical field [0001] The present invention relates to polyamic acid, polyimide, polyamic acid solution, polyimide laminate, flexible device substrate, and their manufacturing methods. The present invention also relates to electronic device materials, TFT substrates, transparent electrode substrates, flexible display substrates, color filters, printed matter, optical materials, liquid crystal display devices, organic EL screens, and electronic papers using the polyimide. Image display devices, 3D displays, solar cells, touch panels, transparent conductive film substrates, and replacement materials for currently used glass parts. Background technique [0002] In recent years, with the rapid development of electronic technologies such as liquid crystal screens, organic EL screens, and electronic paper, solar cells, and touch screens, people have begun to require devices to be thinner, lighter, and even flexible. In this regard, the industry is researching plastic film substr...

Claims

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Application Information

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IPC IPC(8): C08L79/08B32B7/02B32B27/20C08G73/10C08K3/36B32B27/34
CPCC08K3/36C08G73/1042C08G73/105C08K2201/005C08K2201/011B82Y30/00C08G73/1078C08L79/08B32B27/20B32B27/281G02F1/133305G02F1/13338G02F1/133723H01L23/145B32B2457/08B32B2457/12B32B2457/20
Inventor 宇野真理
Owner KANEKA CORP
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