Composition for copper etching and composition for hydrogen peroxide-based metal etching
A hydrogen peroxide and composition technology, which is applied in the field of copper etching compositions and hydrogen peroxide-based metal etching compositions, can solve the problem that the etching ability of the etchant can only be reduced, the replacement cycle of the etchant is shortened, and the performance of the etchant is reduced. and other problems, to achieve the effect of excellent stability, maintaining the etching ability, and increasing the maximum concentration
Active Publication Date: 2020-09-11
OCI
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Problems solved by technology
[0013] When copper is etched with a hydrogen peroxide-based etchant and excessive copper is dissolved in the etchant, it is often found that unstable hydrogen peroxide is decomposed, resulting in a decrease in the performance of the etchant.
[0014] Also, it is often reported that there is a problem of loss of functionality of the etchant as components such as chelating agents and etch inhibitors are chemically modified
[0015] As a result, in the case where hydrogen peroxide in the etchant is decomposed or other components are chemically modified, the etching ability of the etchant can only decrease, which will be a cause of shortening the replacement cycle of the etchant
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[0042] The advantages and features of the present invention and methods for achieving them will be clarified below with reference to the embodiments described later. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various ways that are different from each other. This embodiment makes the disclosure of the present invention complete and is used to make those skilled in the art of the present invention To fully understand the scope of the present invention, the present invention is defined by the scope of the invention claims. The same reference numerals refer to the same structural elements throughout the specification.
[0043] The copper etching composition according to one embodiment of the present invention may contain hydrogen peroxide, a chelating agent, a chelating stabilizer, and water as a hydrogen peroxide-based etchant for wet etching copper.
[0044] The above hydrogen peroxide (H 2 o 2) is the main oxid...
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The present invention relates to: a composition for etching copper; and a hydrogen peroxide-based composition for etching metal and, more specifically, to: a composition for etching copper, capable of inhibiting the generation of a copper precipitate from the etching composition by increasing the stability of a chelate bond formed between copper and organic matter; and a hydrogen peroxide-based composition for etching metal, capable of preventing the decomposition of hydrogen peroxide and the degeneration of the other components within the hydrogen peroxide-based composition for etching metal.
Description
technical field [0001] The present invention relates to a composition for copper etching or a composition for hydrogen peroxide-based metal etching, and more specifically, to a composition for hydrogen peroxide-based metal etching capable of preventing the composition for copper etching or hydrogen peroxide in the composition The above-mentioned composition for copper etching can suppress the generation of copper deposits from the composition for etching by improving the stability of the chelate bond formed between copper and organic matter by improving the stability of the chelate bond formed between copper and organic matter. Background technique [0002] Semiconductor devices, display devices, printed boards, integrated circuit cards (IC cards), and the like are generally formed by patterning metal thin films and the like on substrates to form metal thin film devices, electrode wiring devices, and the like. [0003] As a processing technology for patterning these metal th...
Claims
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IPC IPC(8): C23F1/10C23F1/14C23F1/16C23F1/18
CPCC23F1/10C23F1/14C23F1/16C23F1/18
Inventor 金允澈朴钟熙权伦琼张郁
Owner OCI