A circuit structure for generating high-value reference from low-value reference

Abstract

The invention discloses a circuit structure for generating a high value reference from a low value reference. The circuit structure for generating the high value reference from the low value referenceis characterized in that the circuit structure comprises PMOS (positive channel metal oxide semiconductor) transistors MP1 and MP2, NMOS (n-metal-oxide-semiconductor) transistors MN1 and MN2 and a resistance R1; the gate of the PMOS transistor MP1 is connected with a bias voltage, the source thereof is connected with a power supply voltage, and the drain thereof is connected with the drain of theNMOS transistor MN1; the gate of the PMOS transistor MP2 is connected with the bias voltage, the source thereof is connected with the power supply voltage, the drain thereof is connected with the drain of the NMOS transistor MN2 through the resistance R1, and the drain of the PMOS transistor MP2 outputs a high value reference voltage Vref1; the source of the NMOS transistor MN1 is in ground connection, the drain thereof is connected with the gate of the NMOS transistor MN1 and the gate of the NMOS transistor MN2; the source of the NMOS transistor MN2 in ground connection, and the drain thereof is connected with a low value reference voltage Vref0. The circuit structure for generating the high value reference from the low value reference has the advantage of achieving a low-temperature-drift and high-precision high value reference with a high reference voltage, that is, Vref1=Vref0+DeltaV.

Description

technical field [0001] The invention relates to an analog integrated reference source circuit, in particular to a circuit structure for generating a high-value reference from a low-value reference. Background technique [0002] Voltage references are widely used in analog and digital-analog hybrid integrated circuits, and their performance directly determines the performance of the circuit to a certain extent. In order to meet the requirements of the circuit to work normally under harsh temperature environment and to improve the power utilization efficiency, the voltage reference must have high temperature stability characteristics. Due to different processes, different circuit topologies, and different device characteristics, the reference voltage with the best temperature characteristics of deep submicron, especially nanoscale, CMOS bandgap references is low, for example, in the range of 0.7V to 1.2V , which cannot meet the requirements of LDO and other digital-analog hyb...

AI Technical Summary

Problems solved by technology

Due to different processes, different circuit topologies, and different device characteristics, the reference voltage with the best temperature characteristics of deep submicron, especially nanoscale, CMOS bandgap references is low, for example, in the range of 0.7V to 1.2V , which cannot meet the requirements of LDO and other digital-analog hybrid high-precision analog integrated circuits for high-precision, low-temperature drift and high-precision references with high voltage, for example, the demand for 1.25V high-precision, low-temperature drift references

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