Curved-surface particle source

Abstract

The invention discloses a curved-surface particle source which comprises a curved-surface discharging target material, a water-cooled jacket, a binding post, insulation sleeves, magnetic boots, (multiple groups of) screens, an air inlet and a fixing assembly. The curved-surface discharging target material is connected with negative voltage through the binding post, so that glow discharge can be produced; under the influence of a discharge electrode shape, electron beams are joined to generate a hollow cathode discharge effect; an anode can be a water-cooled air inlet pipe and also can be the screens, the anode is powered by positive electricity so as to receive electrons and accelerate particle output, and the screens can be powered by negative electricity so as to be used as leading electrodes of particles; through the cooperation of the three electrodes, a large number of high-energy particles can be obtained; a discharging cathode is formed by splicing multiple groups of metal substrates, non-metallic materials can be brazed on the surface of the discharging cathode, and the discharging cathode is fixed onto the water-cooled jacket formed by welding a water-cooled coil pipe onthe surface of a stainless steel tube through a bolt; through the insulation sleeves, the insulation between components can be realized; and magnets are built in the magnetic boots. According to the curved-surface particle source provided by the invention, a hollow cathode effect during an annular cathode discharging process is utilized for providing the high-energy particles for a physical vapor deposition (PVD) coating preparation process.

Description

technical field [0001] The invention belongs to the technical field of vacuum coating, and specifically refers to a curved surface particle source. Background technique [0002] Physical vapor deposition (PVD) is mainly to change a certain physical state (solid state into gas state, solid state into overflowable atomic state) through a certain raw material through physical processes such as evaporation, laser irradiation or gas discharge, and deposit The process on the surface of the workpiece to be plated. The state of raw materials during physical vapor deposition has a great influence on the quality of film-forming coatings. For example: the material deposited in the evaporation coating process is a vaporized material, and only high vacuum (10 -3 pa), large gas atom free paths are used to deposit coatings, the energy of deposited atoms is low, and the quality of coatings is relatively poor; magnetron sputtering (glow discharge) ionizes the deposition materials sputtered...

AI Technical Summary

Problems solved by technology

However, there are two problems in the ion source at this stage: one is that the power of the ion source is low, and it cannot form an ion source with a large beam current (the discharge current of a conventional ion source is between 0.1-10A, and the plasma density is very low), resulting in deposition The rate is extremely low; on the other hand, the current ion source ionization objects are mainly inert gas (Ar), reactive gas (C 2 h 2 ) mainly, cannot directly ionize the deposited metal or non-metal atoms (Ti, Si)

However, there are still many problems in the preparation process of diamond-like coatings

[0005] The existing DLC ​​deposition technologies are mainly physical vapor deposition (PVD) and chemical vapor deposition (CVD). PVD mainly includes ion beam deposition (IBD), magnetron sputtering, multi-arc ion plating, pulsed laser deposition, etc. CVD includes thermal Silk chemical vapor deposition and plasma chemically enhanced vapor deposition (PECVD) have some problems: ion beam deposition has low sputtering rate and low deposition rate due to graphite sputtering; magnetron sputtering deposition has low sputtering rate on the one hand and low On the one hand, low atomic energy leads to loose structure and low hardness; a large number of carbon particles will be produced during multi-arc ion plating deposition; pulsed laser deposition has high energy consumption, poor coating uniformity, and small effective deposition area; hot wire vapor deposition technology has high deposition temperature, The range of matrix materials is greatly limited; although PECVD effectively reduces the reaction temperature, the deposition efficiency is low during the deposition process, the ionization rate of carbon atoms is low, and the film quality structure is not dense enough

[0006] The existing carbon particle sources mainly include gaseous carbon particle source, magnetron sputtering source, multi-arc particle carbon coating particle source, laser carbon particle source, etc., wherein the gaseous carbon particle source is mainly through the ion source and other plasma devices. The hydrogen gas is ionized, the magnetron sputtering source refers to the magnetron sputtering graphite target, which provides carbon particles for deposition, and the multi-arc ion carbon plating particle source is arc discharge on the surface of the graphite target or metal carbide target; the gas carbon The particle source needs ionized gas, on the one hand, the ionization rate is low, on the other hand, during the ionization process, carbon particles will be deposited on the source, which will affect the stability of the discharge process and the continuity of production, requiring frequent manual cleaning; and The magnetron sputtering source has low deposition rate, low ionization rate, and the characteristics of graphite discharge of the multi-arc ion carbon plating particle source. The existence of large particles in the discharge process affects the application of the multi-arc ion carbon plating particle source.

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