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Capacitor formed on heavily doped substrate

A technology of heavily doped substrates and capacitors, applied in capacitors, electrical solid devices, circuits, etc., can solve problems such as increased conductivity

Pending Publication Date: 2018-07-31
MICROCHIP TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In general, an increase in dopant concentration leads to an increase in conductivity

Method used

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  • Capacitor formed on heavily doped substrate
  • Capacitor formed on heavily doped substrate
  • Capacitor formed on heavily doped substrate

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[0037] In some conventional IC devices, the main die and the sub-die are separated by an oxide layer used as a capacitor. One example IC device 10 having such a construction is depicted in FIG. 1 , including a primary die 12 and a secondary die 14 . IC device 10 includes two transceiver pairs 20 a , 20 b and 22 a , 22 b connected across isolation layer 30 . Additionally, IC device 10 includes a capacitor 40 (on-chip capacitor) built on primary die 12 and secondary die 14, and associated transmitter / receivers 20a, 20b, 22a, 22b.

[0038] Fabrication of the IC device 10 provides up to 8 μm of oxide for use as the plates of the capacitor 40 . When tested, capacitor 40 broke down to the middle node during the 6kV test. According to conventional techniques, this failure can be remedied by increasing the thickness of the oxide layer used to form the capacitor. In practice, however, the required thickness will greatly increase manufacturing cost and processing complexity.

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Abstract

The teachings of the present disclosure may be applied to the manufacture and design of capacitors. In some embodiments of these teachings, a capacitor may be formed on a heavily doped substrate. Forexample, a method for manufacturing a capacitor may include: depositing an oxide layer on a first side of a heavily doped substrate; depositing a first metal layer on the oxide layer; and depositing asecond metal layer on a second side of the heavily doped substrate.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to commonly-owned US Provisional Patent Application No. 62 / 264,071, filed December 7, 2015, which is hereby incorporated by reference for all purposes. technical field [0003] The present invention relates generally to semiconductor fabrication. The teachings of the present invention are applicable to capacitors formed on heavily doped substrates. Background technique [0004] Some integrated circuit (IC) devices include one or more die fabricated on a substrate. The substrate typically includes one or more semiconductor materials. In IC devices that include multiple transceivers and / or transmitter / receiver pairs, the transceivers typically must be electrically isolated from each other. [0005] In semiconductor production, "doping" refers to the intentional introduction of impurities into a semiconductor material. Such impurities modulate the electrical properties of the semicond...

Claims

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Application Information

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IPC IPC(8): H01L23/522H01L23/00H01L49/02
CPCH01L28/40H01L23/48H01L23/5223H01L28/00H01L2924/00014H01L24/03H01L24/05H01L24/13H01L24/16H01L24/29H01L24/32H01L24/48H01L24/81H01L24/83H01L25/0652H01L2224/0391H01L2224/0401H01L2224/04026H01L2224/04042H01L2224/13022H01L2224/131H01L2224/16145H01L2224/2929H01L2224/293H01L2224/32145H01L2224/48101H01L2224/48105H01L2224/48137H01L2224/49175H01L2224/73257H01L2224/73265H01L2224/81815H01L2924/1205H01L23/5222H01L24/10H01L24/42H01L24/11H01L28/60H01L2224/0345H01L2224/03452H01L2224/11334H01L2224/45099H01L2924/014H01L2924/0665H01L21/31105H01L21/52H01L23/3142H01L24/14H01L24/85H01L2224/14104H01L2224/1412H01L2224/8192
Inventor G·迪克斯R·L·叶奇F·马齐利
Owner MICROCHIP TECH INC