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Ion beam etching of STT-RAM structures

A technology of STT-RAM and etching, applied in the direction of devices applying electro-magnetic effects, material selection, magnetic field controlled resistors, etc., can solve problems such as reducing device performance

Active Publication Date: 2018-07-31
VEECO INSTR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, as the size of the device shrinks below 40nm in width, the damaged edge caused by magnetic tunnel junction etching degrades the performance of the device.

Method used

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  • Ion beam etching of STT-RAM structures
  • Ion beam etching of STT-RAM structures
  • Ion beam etching of STT-RAM structures

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Embodiment Construction

[0042] The present disclosure provides various methods for improving the etching of spin transfer torque random access memory (STT-RAM) structures or stacks.

[0043]In one embodiment, the method includes (1) ion beam etching right through the stack of magnetic tunnel junctions (MTJs), where etching is performed at near normal incidence, (2) at larger angles in windowed mode A short cleanup etch to remove any redeposited material along the sidewalls extending from just below the MTJ to just above the MTJ, (3) cover the deposition package with controlled steps to derive from the tapered profile generated by the IBE etch step revert to a vertical or slightly concave profile, (4) ion beam etch the rest of the stack at near normal incidence while ensuring that most of the encapsulation remains along the sidewalls of the MTJ, (5) at a larger (6) etch the stacked packages to avoid corrosion when exposed to air.

[0044] By use of the phrase "near normal" and variations thereof, wit...

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Abstract

This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack justpast the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the reainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to pending US Nonprovisional Patent Application Serial No. 14 / 927,604, entitled "ION BEAM ETCHING OF STT-RAM STRUCTURES," filed October 30, 2015. technical field [0003] The present application relates to ion beam etching techniques for spin transfer torque (STT) memory structures. Background technique [0004] Spin-transfer torque (STT) random access memory (RAM) is a potential alternative to on-chip SRAM for mobile applications, as well as an alternative to DRAM and NOR flash. It has the attributes of fast read and write, high endurance and non-volatility, with good endurance and low power consumption. [0005] One of the main challenges facing STT-RAM involves the patterning of magnetic stacks in dense arrays. Conductive non-volatile by-products condense on the sidewalls of the structure and electrically shunt the magnetic tunnel junction. In addition, as the size of the device s...

Claims

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Application Information

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IPC IPC(8): H01L43/02H01L43/10H01L43/12
CPCH10N50/01H10N50/80H10N50/85H10N50/00H10N50/10
Inventor 阿吉特·帕兰杰佩鲍里斯·德鲁兹卡特里娜·罗克纳拉辛汗·斯里尼瓦山
Owner VEECO INSTR