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In-situ film annealing with spatial atomic layer deposition

A technology of annealing and deposition temperature, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., and can solve the problem of additional cost increase of device process

Pending Publication Date: 2018-08-03
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The additional post-processing process increases the additional cost of the entire device process

Method used

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  • In-situ film annealing with spatial atomic layer deposition
  • In-situ film annealing with spatial atomic layer deposition
  • In-situ film annealing with spatial atomic layer deposition

Examples

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Embodiment Construction

[0015] Before describing several exemplary embodiments of the present disclosure, it is to be understood that the disclosure is not limited to the details of construction or process steps set forth in the following description. The disclosure is also capable of other embodiments and of being practiced or carried out in various ways.

[0016] "Substrate" as used herein refers to any substrate or material surface formed on a substrate on which film processing is performed during a manufacturing process. For example, substrate surfaces on which processing may be performed include materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, Sapphire, as well as any other material such as metals, metal nitrides, metal alloys and other conductive materials, depending on the application. Substrates include, but are not limited to, semiconductor wafers. The su...

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Abstract

Methods for filling the gap of a semiconductor feature comprise exposure of a substrate surface to a precursor and a reactant and to an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.

Description

technical field [0001] The present disclosure generally relates to methods of depositing thin films. In particular, the present disclosure relates to processes for deposition of films by spatial ALD with in-situ annealing. Background technique [0002] In microelectronic device fabrication, narrow trenches (AR>10:1) need to be filled without voids for many applications. One such application is shallow trench isolation (STI). In STI, the film needs to be high quality (ie, have a wet etch rate ratio below about 2) across the trench with little leakage. [0003] One of the possible solutions is spatial atomic layer deposition (ALD). Spatial ALD uses atomic layer deposition and plasma etch sequences, which achieve gap-free filling of trenches with reasonable throughput. Both thermal ALD and plasma enhanced (PE) ALD can be used to provide conformal gapless deposition. However, although thermal ALD has structurally uniform film quality, the average film quality is relative...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/205H01L21/027H01L21/324G03F7/20
CPCC23C16/045C23C16/56H01L21/02211H01L21/02219H01L21/02337H01L21/02164H01L21/02274H01L21/0228H01L21/0234H01L21/324H01L21/0262C23C16/45527C23C16/50H01L21/02208H01L21/76224
Inventor 田中启一A·肖特M·斯里拉姆S·冈迪科塔
Owner APPLIED MATERIALS INC