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Reverse conducting IGBT containing reverse side trench gates

A reverse-conducting, grooved gate technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as foldback, device power consumption, reliability impact, and snap-back

Active Publication Date: 2018-08-10
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ordinary RC-IGBT also has disadvantages. The main disadvantage is the phenomenon of snap-back, which will adversely affect the power consumption and reliability of the device.

Method used

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  • Reverse conducting IGBT containing reverse side trench gates
  • Reverse conducting IGBT containing reverse side trench gates
  • Reverse conducting IGBT containing reverse side trench gates

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Embodiment Construction

[0030] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0031] The main purpose of the present invention is to suppress the snap-back phenomenon of the RC-IGBT.

[0032] figure 1 It is a schematic diagram of an RC-IGBT cell structure of the present invention, which contains two types of groove gate structures. One is the grooved gate structure (consisting of 33 and 34) used to control the switch connected to the gate (G), and the other is the grooved gate structure (consisting of 12 and 35) for auxiliary depletion , where the insulating dielectric layers (34 and 35) can be SiO 2 The dielectric layer, used to control the conductor region (33) of the grooved gate structure of the switch can be heavily doped n-type or p-type polysilicon material, used to assist the depletion of the conductor region (12) of the grooved gate structure Can be heavily doped p-type polysilicon material. The first trench gate structure for as...

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Abstract

The invention provides a Reverse Conducting Insulated Gate Bipolar Transistor (RC-IGBT), and a reverse side contains thereof contains trench type gate structures connected with an emitter and used forassisting depletion. A conductor region in each trench gate structure adopts a heavily-doped polycrystal semiconductor material of a second conduction type, built-in potential difference between theconductor region and a drifting region enables the drifting region between the two trench gate structures to deplete, and resistance on an electronic channel from the drifting region to a collector region of a first conduction type is increased, thereby suppressing a snap-back phenomenon.

Description

technical field [0001] The invention belongs to semiconductor devices, especially semiconductor power devices. Background technique [0002] Reverse Conducting Insulated Gate Bipolar Transistor (Reverse Conducting Insulated Gate Bipolar Transistor, RC-IGBT) is a device that integrates an IGBT and an antiparallel diode on one chip. The idea of ​​reverse conduction insulated gate bipolar transistor (RC-IGBT) can reduce chip area, reduce parasitic parameters, and reduce packaging cost. However, ordinary RC-IGBTs also have disadvantages, the main disadvantage of which is the phenomenon of snap-back, which will adversely affect the power consumption and reliability of the device. Contents of the invention [0003] The object of the present invention is to provide a reverse conduction type insulated gate bipolar transistor (RC-IGBT) device. Compared with common RC-IGBT, the RC-IGBT device provided by the present invention eliminates the snap-back phenomenon. [0004] The prese...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/08H01L29/423
CPCH01L29/0821H01L29/4236H01L29/7397
Inventor 黄铭敏范林杰贾璐
Owner SICHUAN UNIV