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Power semiconductor device and method for manufacturing power semiconductor device

A technology of semiconductor and electric power, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of power module reliability loss and damage, and achieve the effect of high yield

Active Publication Date: 2018-08-31
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, the sinterable metal bonding material is high strength, so when thermal stress is repeatedly applied, the base material and the metallization layer of the semiconductor element are damaged due to the occurrence of cracks in the bonding portion, etc., thereby causing damage to the power module. The reliability is prone to loss of such problems

Method used

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  • Power semiconductor device and method for manufacturing power semiconductor device
  • Power semiconductor device and method for manufacturing power semiconductor device
  • Power semiconductor device and method for manufacturing power semiconductor device

Examples

Experimental program
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Embodiment approach 1

[0044] Figure 1A is a plan view showing power module 10 according to Embodiment 1 of the present invention, Figure 1B yes Figure 1A The A-A line profile. The power module 10 includes: a substrate 1; and a semiconductor element 3 bonded to the substrate 1 using a sinterable metal bonding material 2 (that is, provided via a bonding layer made of a sinterable metal bonding material).

[0045] The substrate 1 may also be a metal substrate such as copper (Cu) or aluminum (Al). In addition, the substrate 1 may be a ceramic substrate in which a conductive layer made of a metal such as Cu or Al is laminated and bonded to an insulating ceramic such as Al2O3, Si3N4, or AlN. Here, the conductive layer using this metal may be a single metal layer such as Cu or Al, or may be an example in which a noble metal material such as silver (Ag) or gold (Au) is coated on the metal layer. On the surface of the substrate 1 on which the semiconductor element 3 is mounted, a substrate electrode no...

Embodiment

[0068] Next, although Embodiment 1 of this invention is demonstrated concretely using an Example (samples S1-S4), these do not limit this invention. First, the substrate 1, the sinterable metal bonding material 2, and the semiconductor element 3 used in the examples will be described.

[0069] (Substrate 1)

[0070] A conductive layer using Cu, which is an example of a metal, is bonded to both surfaces of Si3N4, which is an example of an insulating ceramic, using brazing filler metal, to prepare a substrate 1 . The linear expansion coefficient of Si3N4 is about 3 ppm / °C, and that of Cu is about 17 ppm / °C. Therefore, the larger the thickness of the Cu plate, the larger the linear expansion coefficient of the substrate 1 as a whole. In order to reduce the stress applied to the semiconductor element 3 and the sinterable metal bonding material 2 and the resulting deformation, the Cu plate is preferably thin. Specifically, the thickness of the Cu plate is preferably 1.0 mm or le...

Embodiment approach 2

[0104] Figure 6 is the power module 20 according to Embodiment 2 of the present invention and Figure 1B Corresponding sectional view. Figure 7 yes Figure 6 Enlarged view of part of . In Embodiment 1, an example in which each of the surface metallization layer 5 and the backside metallization layer 6 of the semiconductor element 3 have a single-layer structure will be described. In Embodiment 2, an example in which the surface metallization layer 25 and the rear surface metallization layer 26 each have a multilayer structure will be described, and a preferable layer structure will be studied respectively. In addition, the power module 20 of the second embodiment has the same or corresponding components as the power module 10 of the first embodiment except for the layer structure of the surface metallization layer and the back metallization layer of the semiconductor element. In the description and drawings, the same reference numerals are assigned to these components, a...

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PUM

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Abstract

This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.

Description

technical field [0001] The present invention relates to a power semiconductor device in which a semiconductor element is bonded to a substrate using a sinterable metal bonding material, and a method of manufacturing the power semiconductor device. Background technique [0002] In power modules (or power semiconductor devices), vertical semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors) and diodes are sometimes mounted as switching elements and rectifying elements. This vertical semiconductor element has, for example, a back metallization layer (back electrode) provided on the entire back surface, and a surface metallization layer (surface electrode) provided on a part of the surface facing the back surface. As a metal material constituting the metallization layer, Ni, Mo, or Cr may be used. The back electrode is electrically connected to the substrate electrode, and the front electrode is electrically connected to the external terminal via the wiring ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/52H01L29/78H01L29/12
CPCH01L29/417H01L29/66333H01L29/7393H01L24/05H01L24/06H01L24/29H01L24/32H01L24/83H01L2224/04026H01L2224/05124H01L2224/05155H01L2224/05166H01L2224/05624H01L2224/05644H01L2224/06181H01L2224/29339H01L2224/29344H01L2224/29347H01L2224/29355H01L2224/29364H01L2224/29369H01L2224/32225H01L2224/32245H01L2224/33181H01L2224/73263H01L2224/83048H01L2224/83097H01L2224/83192H01L2224/83201H01L2224/8384H01L2224/05568H01L2224/05583H01L2224/05023H01L2224/2929H01L2224/293H01L2924/3511H01L2224/83907H01L2924/00014H01L2924/01046H01L2924/01032H01L2924/01029H01L2924/01014H01L29/12H01L21/185H01L21/52H01L21/7685H01L21/4875H01L23/4924
Inventor 山田隆行别芝范之村松佑哉福优中岛泰
Owner MITSUBISHI ELECTRIC CORP
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