Perovskite solar cell based on mesoporous conductive layer substrate and its preparation method
A technology for solar cells and mesoporous conduction, which is used in the manufacture of semiconductor/solid-state devices, nanotechnology for materials and surface science, circuits, etc. problem, to achieve the effect of improving short-circuit current, easy transmission, and more transmission
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[0031] A method for preparing a perovskite solar cell based on a mesoporous conductive layer substrate, specifically comprising the following steps:
[0032] Step 1, cleaning of the conductive glass; ultrasonically clean the conductive glass in acetone, alcohol and deionized water in turn, and dry it for later use;
[0033] Step 2, using stannous chloride as a tin source, polyethylene glycol as a pore-forming agent, and ethylene glycol methyl ether as a solvent to prepare a seed layer precursor solution; the specific process is: add stannous chloride and polyethylene glycol In ethylene glycol methyl ether solvent, stir until clear and transparent solution, obtain seed layer precursor solution; Wherein, the mass concentration of stannous chloride in the seed layer precursor solution is 0.04~0.06g / mL, the mass concentration of polyethylene glycol is 0.02~0.03g / mL;
[0034] Step 3. Add the seed layer precursor solution obtained in step 2 dropwise onto the cleaned conductive glas...
Embodiment 1
[0039]A method for preparing a perovskite solar cell based on a mesoporous conductive layer substrate, specifically comprising the following steps:
[0040] Step 1, cleaning of the conductive glass; ultrasonically clean the FTO conductive glass in acetone, alcohol and deionized water for 20 minutes respectively, and dry in a vacuum drying oven for use;
[0041] Step 2. Add 0.564g of stannous chloride and 0.25g of polyethylene glycol (molecular weight 6000) into 10mL of ethylene glycol methyl ether solvent in sequence, and stir until a clear and transparent solution is obtained to obtain the seed layer precursor;
[0042] Step 3. Add the seed layer precursor solution obtained in step 2 dropwise onto the cleaned FTO conductive glass in step 1, and spin-coat at a speed of 3000rpm for 30s. After the spin-coating is completed, anneal at 550°C for 120min in an air atmosphere to form a seed layer; among them, the dropping amount of seed layer precursor is 16.6μL / cm 2 ;
[0043] Ste...
Embodiment 2
[0047] The mesoporous conductive layer was prepared according to the steps of Example 1, and the time of the hydrothermal reaction in step 5 was set as: 0h, 6h, 12h, 18h, and the rest of the steps remained unchanged. The cross-sectional SEM and properties of the prepared mesoporous conductive layer are as follows: Figure 6 shown.
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