Silicon micro-cup type resonant gyro processing method based on polysilicon growth method

A polysilicon growth, resonant gyroscope technology, which is applied in the process, microstructure technology, microstructure device and other directions for producing decorative surface effects, can solve problems such as low surface smoothness and small aspect ratio of silicon microcup-shaped resonant gyroscopes , to achieve the effect of high surface smoothness, wide application range and large aspect ratio

Active Publication Date: 2018-09-07
ZHONGBEI UNIV
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems of small aspect ratio and low surface smoothness of silicon microcup-shaped resonant gyroscope processed by deep si

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon micro-cup type resonant gyro processing method based on polysilicon growth method
  • Silicon micro-cup type resonant gyro processing method based on polysilicon growth method
  • Silicon micro-cup type resonant gyro processing method based on polysilicon growth method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0025] A silicon microcup resonant gyroscope processing method based on the polysilicon growth method, the method is realized by the following steps:

[0026] Step a: First, the first silicon nitride layer 2 is grown on the upper surface of the circular silicon substrate 1 by using an LPCVD process, and the first silicon nitride layer 2 is etched to form a first circular window and a I circular window; the axis of the first circular window and the axis of the first circular window coincide with the axis of the circular silicon substrate 1; then, the LPCVD process is used to grow on the lower surface of the circular silicon substrate 1 The second silicon nitride layer 3 is etched on the second silicon nitride layer 3 to form a second circular window penetrating up and down; the axis of the second circular window coincides with the axis of the circular silicon substrate 1, and The diameter of the II circular window is smaller than the diameter of the I circular window;

[0027] Step...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a silicon micro-cup type resonant gyro processing method, and in particular relates to a silicon micro-cup type resonant gyro processing method based on a polysilicon growth method. The silicon micro-cup type resonant gyro processing method based on the polysilicon growth method disclosed by the invention solves the problem that a silicon micro-cup type resonant gyro processed through a deep silicon etching method is small in depth-to-width ratio and low in surface flatness. The silicon micro-cup type resonant gyro processing method based on the polysilicon growth method comprises the steps of: a, growing an Ith silicon nitride layer on the upper surface of a circular silicon substrate; b, etching the upper surface of the circular silicon substrate to form a circular concave cavity; c, removing the Ith silicon nitride layer and an IIth silicon nitride layer; d, growing a polysilicon layer on the surface of a silicon dioxide layer; e, etching to form an IIth circular window; f, re-growing a silicon dioxide layer; g, corroding a circular silicon convex platform; and h, corroding the exposed part of the silicon dioxide layer. The silicon micro-cup type resonant gyro processing method based on the polysilicon growth method disclosed by the invention is suitable for processing the silicon micro-cup type resonant gyro.

Description

technical field [0001] The invention relates to a processing method for a silicon microcup-shaped resonant gyroscope, in particular to a processing method for a silicon microcup-shaped resonant gyroscope based on a polysilicon growth method. Background technique [0002] Silicon microcup-shaped resonant gyroscope has good high-shock resistance characteristics, and it is widely used in weapon guidance, aerospace, biomedicine, consumer electronics and other fields. Under the current technical conditions, silicon microcup resonator gyroscopes are generally processed by deep silicon etching. However, due to the limitations of the deep silicon etching method, the processed silicon microcup resonator gyroscope generally has the problems of small aspect ratio and low surface smoothness, which limits the scope of application of the silicon microcup resonator gyroscope. . Based on this, it is necessary to invent a new processing method to solve the problems of small aspect ratio an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B81C1/00
CPCB81C1/00349B81C1/00404
Inventor 曹慧亮刘俊石云波唐军李杰申冲高晋阳邵星灵黄堃张英杰
Owner ZHONGBEI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products