Method for growing superlattice insertion layer used for alleviating/eliminating cracks on surface of aluminum gallium nitride film by use of molecular beam epitaxial technology
A technology of molecular beam epitaxy and surface cracking, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., to solve the inconvenience and error, ensure stability and safety, and reduce the number of frequent switches.
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Embodiment 1
[0032] Select the hydride vapor phase epitaxy (HVPE) method to heteroepitaxy the undoped GaN thick film on the sapphire substrate. After peeling off, the GaN substrate is obtained. The diameter is about 50.8mm, the thickness is about 430μm, and the dislocation density is less than 5× 10 6 cm -2 , the surface roughness is less than 0.6nm. Such as figure 1As shown, a 1.3 μm-thick metal titanium (Ti) was vapor-deposited on the backside of the substrate 1 by physical vapor deposition (PVD) at a deposition rate of 12 nm / min. Then, the substrate 1 is cleaned with acetone, ethanol and deionized water in sequence. After cleaning, the surface of the substrate 1 is blown dry with nitrogen gas. After the substrate 1 is cleaned, the substrate is placed in the degassing chamber of the MBE equipment, and the surface of the substrate 1 is degassed at a temperature of 450° C. for at least 30 minutes.
[0033] Set the Ga source baffle to remain closed. Introduce nitrogen, set the power o...
Embodiment 2
[0036] Select the hydride vapor phase epitaxy (HVPE) method to heteroepitaxy the undoped GaN thick film on the sapphire substrate. After peeling off, the GaN substrate is obtained. The diameter is about 50.8mm, the thickness is about 430μm, and the dislocation density is less than 5× 10 6 cm -2 , the surface roughness is less than 0.6nm. Such as figure 1 As shown, a 1.3 μm-thick metal titanium (Ti) was vapor-deposited on the backside of the substrate 1 by physical vapor deposition (PVD) at a deposition rate of 12 nm / min. Then, the substrate 1 is cleaned with acetone, ethanol and deionized water in sequence. After cleaning, the surface of the substrate 1 is blown dry with nitrogen gas. After the substrate 1 is cleaned, the substrate is placed in the degassing chamber of the MBE equipment, and the surface of the substrate 1 is degassed at a temperature of 450° C. for at least 30 minutes.
[0037] Set the Ga source baffle to remain closed. Introduce nitrogen, set the power ...
Embodiment 3
[0040] Select the hydride vapor phase epitaxy (HVPE) method to heteroepitaxy the undoped GaN thick film on the sapphire substrate. After peeling off, the GaN substrate is obtained. The diameter is about 50.8mm, the thickness is about 430μm, and the dislocation density is less than 5× 10 6 cm -2 , the surface roughness is less than 0.6nm. Such as figure 1 As shown, a 1.3 μm-thick metal titanium (Ti) was vapor-deposited on the backside of the substrate 1 by physical vapor deposition (PVD) at a deposition rate of 12 nm / min. Then, the substrate 1 is cleaned with acetone, ethanol and deionized water in sequence. After cleaning, the surface of the substrate 1 is blown dry with nitrogen gas. After the substrate 1 is cleaned, the substrate is placed in the degassing chamber of the MBE equipment, and the surface of the substrate 1 is degassed at a temperature of 450° C. for at least 30 minutes.
[0041] Set the Ga source baffle to remain closed. Introduce nitrogen, set the power ...
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