Guided Mode Sapphire Growth System
A sapphire and guided mode technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of large size, small number of sapphire wafers, and poor quality.
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Embodiment approach
[0029] According to a preferred embodiment of the present invention, a vacuum weighing device 21 is provided inside the load cell 2 . The weight of the crystal at one end of the seed rod 7 during crystal growth was measured under vacuum conditions.
[0030] In the present invention, the vacuum degree of the vacuum weighing device 21 may be a value that can reduce the weighing error of the vacuum weighing device 2 . Preferably, the vacuum degree (absolute pressure) of the vacuum weighing device 2 is less than 5×10 -2 Pa.
[0031] According to another preferred embodiment of the present invention, the guided mode sapphire crystal growth system further includes a vacuuming device 22 , and the vacuuming device 22 is communicated with the vacuum weighing device 21 .
[0032] In the present invention, the vacuuming device 22 may be an existing device that can achieve the purpose of vacuuming the vacuum weighing device 21 , for example, the vacuuming device 22 may be a vacuum pump....
Embodiment 1
[0050] This example is in figure 1 implemented in the setup shown.
[0051] The guided mode sapphire crystal growth system comprises a sapphire crystal growth furnace 1, a load cell 2, and an automatic temperature control device 3, and the inside of the sapphire crystal growth furnace 1 is provided with a mold 4, a crucible 5, a heating element 6 (heating coil) and Seed rod 7, the mold 4 is arranged inside the crucible 5, the heating element 6 is arranged on the outer periphery of the crucible 5, and the mold 4 has 22 slits 8 (parallel arrangement, relative The spacing between adjacent two slits 8 is 1mm), the height h of the mold 4 is 94mm, the width d of each slit 8 is 0.7mm, and the length l of each slit 8 is 88mm; The crystal rod 7 is arranged above the crucible 5, the seed rod 7 is connected to the load cell 2, and the automatic temperature control device 3 is configured to receive the load signal from the load cell 2 (Crystal growth speed), and feedback control the hea...
Embodiment 2
[0060] This embodiment adopts the device of Embodiment 1, and the difference is that the height h of the mold 4 is 95 mm, the width d of each slit is 0.8 mm, and the length l of each slit is 92 mm. The pitch between the slits 8 is 1.3 mm, and there are 24 slits.
[0061] Crystal growth process:
[0062] a. The raw material is placed in the crucible 5, the seed crystal is fixed on one end of the seed crystal rod 7, and the furnace body (sapphire crystal growth furnace 1) is cleaned up to ensure that there are no foreign matter or impurities in the furnace;
[0063] b. Vacuum through the vacuum port 12 until the vacuum degree is less than 5×10 -2 Pa, and heated to 750 ° C, and then into the Ar gas;
[0064] c. Continue to heat up to 2000°C through the heating part 6. After the material is melted, control the temperature to 2000°C. Shake the seed crystal rod down so that the seed crystal is "baked" at a position 4-5 mm away from the upper surface of the mold 4. Preheat the see...
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Abstract
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