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Perovskite optoelectronic device based on tunneling effect and preparation method thereof

A technology of photoelectric devices and tunneling effect, which is applied in the field of microelectronics, can solve the problems of weak photocurrent, reduced separation, low sensitivity and efficiency of photoelectric devices, etc., and achieve the goal of increasing photocurrent, reducing recombination, and easy mass production Effect

Active Publication Date: 2018-09-28
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The traditional structure of perovskite optoelectronic devices is Si and CH 3 NH 3 PB 3 In direct contact, the conduction band of the contact surface is bent so that the photogenerated electrons are transferred from CH 3 NH 3 PB 3 flow to Si, but the valence band energy level blocks photogenerated holes from Si to CH 3 NH 3 PB 3 Therefore, a large number of holes in the contact area will lead to a large number of recombination of photogenerated electrons and photogenerated holes, and the separation of photogenerated electrons and photogenerated holes will be reduced, resulting in weak photocurrent. Therefore, the sensitivity and relatively low efficiency

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  • Perovskite optoelectronic device based on tunneling effect and preparation method thereof
  • Perovskite optoelectronic device based on tunneling effect and preparation method thereof
  • Perovskite optoelectronic device based on tunneling effect and preparation method thereof

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Embodiment 1

[0044] See figure 1 , figure 1 It is a flow chart of a method for manufacturing a perovskite photoelectric device based on the tunneling effect provided by an embodiment of the present invention. The manufacturing method of the perovskite photoelectric device based on the tunneling effect in this embodiment includes the following steps:

[0045] S1: select Si substrate;

[0046] Specifically, intrinsic Si with a thickness of 400 μm is selected as the Si substrate. The Si substrate functions to support the entire photodetector structure.

[0047] S2: depositing a metal material on one surface of the Si substrate to form a lower electrode;

[0048] Specifically, the S2 includes:

[0049] S21: Use argon gas with a purity of 99.999% by mass to clean the cavity of the magnetron sputtering equipment for 5 minutes and vacuum to 6×10 -4 -1×10 -3 Pa;

[0050] S22: Use argon gas with a purity of 99.999% as a sputtering gas into the sputtering chamber;

[0051] S23: When the vacuum degree is 6×10 ...

Embodiment 2

[0080] See figure 2 , figure 2 This is a schematic structural diagram of a perovskite photoelectric device based on the tunneling effect provided by an embodiment of the present invention. The perovskite photoelectric device based on the tunneling effect of this embodiment has a multilayer structure, which includes an upper electrode 1, a light absorption layer 2, a tunneling layer 3, a substrate 4, and a lower electrode 5 in order. In this embodiment, the upper electrode 1 uses Au material; the light absorption layer 2 uses CH 3 NH 3 PbI 3 Material; tunnel layer 3 uses HfO 2 Material; the substrate 4 uses intrinsic Si; the lower electrode 5 uses Al material. The perovskite photoelectric device based on the tunneling effect of this embodiment can be prepared by the preparation method described in the first embodiment.

[0081] Specifically, the manufacturing method of the perovskite optoelectronic device based on the tunneling effect in this embodiment includes:

[0082] Step a:...

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Abstract

The invention relates to a perovskite optoelectronic device based on tunneling effect and a preparation method thereof. The preparation method comprises the steps of selecting a Si substrate; depositing metal material on one side surface of the Si substrate to form a lower electrode; depositing HfO2 on the other surface of the Si substrate to form a tunneling layer; depositing CH3NH3PbI3 on the tunneling layer to form a light absorption layer; and depositing the metal material on the light absorption layer to form an upper electrode, and thus forming the perovskite optoelectronic device basedon the tunneling effect. The perovskite optoelectronic device sequentially comprises the upper layer, the CH3NH3PbI3 light absorption layer, the HfO2 tunneling layer, the Si substrate and the lower electrode. The perovskite optoelectronic device provided by the invention has the HfO2 tunneling layer between the Si substrate and the CH3NH3PbI3, so that the structure and preparation technology are simple, the recombination of photogenerated electrons and photogenerated holes is reduced, the photocurrent is increased, and the sensitivity and efficiency of the photoelectric device are improved.

Description

Technical field [0001] The invention belongs to the technical field of microelectronics, and specifically relates to a perovskite photoelectric device based on the tunneling effect and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of electronic technology, the demand for the sensitivity of optoelectronic devices in life, military and scientific research has become higher and higher. Among them, research on structure, technology and materials is the main reason for improving the performance and sensitivity of optoelectronic devices. direction. [0003] Perovskite (CH 3 NH 3 PbI 3 ) As an organic-inorganic hybrid material, it is a new type of optoelectronic material, which has a long-range ordered crystal structure and takes into account the advantages of both organic and inorganic. In terms of inorganic components, perovskite has strong covalent bonds and ionic bonds, which make it have high mobility, thermal stability and g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K30/10Y02E10/549Y02P70/50H10K85/50
Inventor 贾仁需李欢汪钰成庞体强
Owner XIDIAN UNIV