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Fabrication method of resonant tunneling diode wafer structure

A resonant tunneling and diode technology, which is applied in the direction of diode, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of low etching precision, achieve the effect of increasing tolerance and realizing precise control

Active Publication Date: 2020-02-18
深圳市华讯方舟光电技术有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, and provide a method for preparing a resonant tunneling diode wafer structure, aiming at solving the problem of low etching precision in the preparation process of the existing resonant tunneling diode wafer structure. technical problem

Method used

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  • Fabrication method of resonant tunneling diode wafer structure
  • Fabrication method of resonant tunneling diode wafer structure

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preparation example Construction

[0016] An embodiment of the present invention provides a method for preparing a resonant tunneling diode wafer structure, including the following steps:

[0017] S01: Provide substrate;

[0018] S02: a first heavily doped InGaAs layer, an InP layer, a first AlAs barrier layer, an InGaAs potential well layer, a second AlAs barrier layer, and a second heavily doped InGaAs layer are sequentially stacked and deposited on the substrate;

[0019] S03: Depositing a metal pattern on the second heavily doped InGaAs layer to form a second ohmic contact;

[0020] S04: In areas other than the metal pattern, first etch from the second heavily doped InGaAs layer to the InP layer with a first etchant that can etch InGaAs material and AlAs material but does not etch InP material, Etching to the first heavily doped InGaAs layer with a second etchant that can etch the InP material but does not etch the InGaAs material and the AlAs material;

[0021] S05: Depositing metal on the first heavily ...

Embodiment 1

[0031] A resonant tunneling diode wafer structure (see figure 2 ) preparation method, comprising the steps of:

[0032] S11: providing an InP substrate;

[0033] S12: the first heavily doped InGaAs layer (layer 11), the InP layer (layer 10), the InAlAs layer (layer 9), and the first lightly doped InGaAs layer (layer 8) are sequentially deposited on the InP substrate , the first undoped InGaAs layer (layer 7), the first AlAs barrier layer (layer 6), the InGaAs potential well layer (layer 5), the second AlAs barrier layer (layer 4), the second undoped InGaAs (layer 3), a second lightly doped InGaAs layer (layer 2) and a second heavily doped InGaAs layer (layer 1);

[0034] S13: depositing metal (Ti / Pd / Au) on the second heavily doped InGaAs layer (layer 1) to form a second ohmic contact;

[0035] S14: In the area other than the metal, first use the first etchant (H 3 PO 4 :H 2 o 2 :H 2 O=1:1:8 acid solution) etch from the second heavily doped InGaAs layer (layer 1) to th...

Embodiment 2

[0038] A resonant tunneling diode wafer structure (see figure 2 ) preparation method, comprising the steps of:

[0039] S11: providing an InP substrate;

[0040] S12: the first heavily doped InGaAs layer (layer 11), the InP layer (layer 10), the InAlAs layer (layer 9), and the first lightly doped InGaAs layer (layer 8) are sequentially deposited on the InP substrate , the first undoped InGaAs layer (layer 7), the first AlAs barrier layer (layer 6), the InGaAs potential well layer (layer 5), the second AlAs barrier layer (layer 4), the second undoped InGaAs (layer 3), a second lightly doped InGaAs layer (layer 2) and a second heavily doped InGaAs layer (layer 1);

[0041] S13: depositing metal (Ti / Pd / Au) on the second heavily doped InGaAs layer (layer 1) to form a second ohmic contact;

[0042] S14: In the area other than the metal, first use the first etchant (H 3 PO 4 :H 2 o 2 :H 2 O=1:1:38 acid solution) etch from the second heavily doped InGaAs layer (layer 1) to t...

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Abstract

The present solution relates to a preparation method for a resonant-tunneling diode wafer structure, comprising the following steps: providing a substrate; depositing in sequential layers on the substrate a first heavily-doped InGaAs layer, an InP layer, a first AlAs barrier layer, an InGaAs potential well layer, a second AlAs barrier layer, and a second heavily-doped InGaAs layer; depositing a metal pattern on the second heavily-doped InGaAs layer to form a second ohmic contact; on a region outside the metal pattern, first using a first etching liquid able to etch InGaAs material and AlAs material, but not able to etch InP material to etch from the second heavily-doped InGaAs layer to the InP layer, and then using a second etching liquid able to etch InP material, but not able to etch InGaAs material or AlAs material to etch to the first heavily-doped InGaAs layer; and depositing a metal on the etched first heavily-doped InGaAs layer to form a first ohmic contact.

Description

technical field [0001] The invention belongs to the technical field of micro-nano processing, and in particular relates to a method for preparing a resonant tunneling diode wafer structure. Background technique [0002] Due to its unique properties, terahertz wave has narrow pulse width, high bandwidth, low photon energy, and can penetrate most dry, non-metallic, non-polar substances and dielectric materials, it can be used for detection, imaging and integrated high-bandwidth wireless communication systems , It has a wide range of applications in various fields (aerospace, marine equipment, security, medical, cultural heritage, etc.). However, due to the lack of effective terahertz radiation sources and detection methods, electromagnetic waves in the terahertz frequency band have not been fully studied and applied. In many terahertz practical applications, it is necessary to use a high-power radiation source to irradiate the target object for detection, imaging and other ap...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L21/306
CPCH01L21/30604H01L29/66219
Inventor 张翠丁庆杨旻蔚孙竹许奔
Owner 深圳市华讯方舟光电技术有限公司