Supercharge Your Innovation With Domain-Expert AI Agents!

Outer mask plasma processing apparatus and manufacturing method of photo mask

A technology of plasma and outer mask, which is applied in the field of outer mask, and can solve the problems such as the function reduction of phase shift mask

Active Publication Date: 2018-10-23
SHIBAURA MECHATRONICS CORP
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, by simply forming the shutter opposite to the object to be processed, there is a risk that radicals (neutral active type) supplied through the opening of the shutter can reach the layer containing chromium at the outside of the pattern containing molybdenum silicon , and free radicals wrapped around the sides of the shutter can reach the surface of the chromium-containing layer at the outside of the molybdenum-silicon-containing pattern
When free radicals reach the surface of the chromium-containing layer, the chromium-containing layer is etched and the functionality of the phase shift mask can be reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Outer mask plasma processing apparatus and manufacturing method of photo mask
  • Outer mask plasma processing apparatus and manufacturing method of photo mask
  • Outer mask plasma processing apparatus and manufacturing method of photo mask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Embodiments will now be described with reference to the drawings. The same reference numerals are applied to similar constituent elements in the drawings, and detailed description thereof is omitted.

[0021] Plasma processing equipment 1

[0022] First, a plasma processing apparatus 1 according to an embodiment of the present invention will be explained.

[0023] figure 1 is a layout diagram illustrating the plasma processing apparatus 1 .

[0024] like figure 1 As shown, a storage unit 10 , a transport unit 20 , a load lock unit 30 , a transport unit 40 , a processing unit 50 and a control unit 60 are provided in the plasma processing apparatus 1 .

[0025] For example, the planar shape of the processed object 200 is a square, and the plasma etching process is performed on the processed object 200 by the plasma processing apparatus 1 . In addition, the plasma processing apparatus 1 may be configured as an apparatus that manufactures a phase shift mask or a reflec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to an outer mask used when manufacturing a photo mask by etching an object to be processed, and the object has a surface on which a pattern portion is provided. The outer mask includes a base portion exhibiting a plate shape and including an opening in a central region, and a frame portion exhibiting a frame shape and provided along a periphery of the base portion. The frameportion has a surface which contacts the surface of the object at four corners of the surface of the object.

Description

technical field [0001] Embodiments of the invention relate to methods of manufacturing overmasks, plasma processing apparatuses, and photomasks. Background technique [0002] Microstructures such as semiconductor devices are fabricated using photolithography methods. In photolithography, exposure is performed using a photo mask. In recent years, a phase shift mask that improves transcription performance by increasing resolution or depth of focus in exposure, or a reflection that performs transcription of a fine pattern using extreme ultraviolet light (EUV) used in EUV lithography has been proposed. Mask (reflective mask), etc., instead of binary mask (binarymask). [0003] Photolithography is also used in the manufacture of phase shift masks or reflective masks. For example, in manufacturing a phase shift mask, a layer containing molybdenum silicon (MoSi) is formed on a base made of quartz, a layer containing chromium (Cr) is formed on a layer containing molybdenum silico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32G03F1/82
CPCB23K10/00B23K10/003B23K2101/40G03F1/26G03F1/76G03F1/80G03F1/82G03F7/2063G03F7/427H01J37/32366H01J37/32743H01J2237/334H01J2237/3346H01L21/0337H01L21/3065
Inventor 饭野由规宫本高志
Owner SHIBAURA MECHATRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com