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Sn-Zn-O-BASED OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME

A manufacturing method and technology of sintered body, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve problems such as not being effective, difficult to obtain density, conductivity, and unsatisfactory

Active Publication Date: 2018-10-23
SUMITOMO METAL MINING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, the methods described in Patent Documents 1 and 2 are effective methods for producing a Zn-Sn-O-based oxide sintered body containing Zn as a main component, and as an effective method for producing a sintered body containing Sn as a main component that requires high chemical resistance. Sn-Zn-O-based oxide sintered body as the main component, especially a Sn-Zn-O-based oxide sintered body with a high Sn concentration having an atomic number ratio Sn / (Zn+Sn) of 0.75 or more and 0.9 or less. not effective
Although it is true that the strength of the sintered body that can withstand the mechanical strength can be obtained by adopting the methods of Patent Documents 1 and 2, it is difficult to obtain sufficient density and electrical conductivity, and cannot satisfy the characteristics required for sputtering film formation at the mass production site
That is, in the atmospheric pressure sintering method, there are still problems in terms of high density of the sintered body and electrical conductivity

Method used

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  • Sn-Zn-O-BASED OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME
  • Sn-Zn-O-BASED OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME
  • Sn-Zn-O-BASED OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] Prepare SnO with an average particle size of 10 μm or less 2 powder, ZnO powder with an average particle size of 10 μm or less, Ta as an additive element X with an average particle size of 20 μm or less 2 o 5 pink.

[0077] Then, deploy SnO 2 powder, ZnO powder and Ta 2 o 5 Powder so that the atomic number ratio Sn / (Sn+Zn) of Sn and Zn is 0.8, and the atomic number ratio Ta / (Sn+Zn+Ta) of the added element X is 0.01, and the raw material powder obtained is mixed with pure water, organic The binder and the dispersant were mixed in a mixing container so that the raw material powder concentration was 60% by mass.

[0078] Next, using loaded hard ZrO 2 Ball bead milling device (LMZ type, manufactured by Ishizawa Fine Technology Co., Ltd.), wet pulverization until the average particle size of the raw material powder reaches 1 μm or less, and then mixing and stirring for more than 10 hours to obtain a slurry . In addition, the measurement of the average particle diamet...

Embodiment 2

[0085] As the above added element X use Nb 2 o 5 powder, mix SnO 2 powder, ZnO powder, and Nb 2 o 5 Powder so that the atomic ratio Nb / (Sn+Zn+Nb) of the added element X is 0.01, except that, it is carried out in the same manner as in Example 1, and the Sn-Zn-O-based oxide sintered body of Example 2 is produced. . The relative density and resistivity of this processed body were measured by the same method as in Example 1. As a result, the relative density was 99.3%, and the resistivity was 0.09 Ω·cm. The conditions and results are shown in Table 1-1 and Table 1-2.

Embodiment 3

[0087] As the above added element X use WO 3 powder, mix SnO 2 powder, ZnO powder, and WO 3 Powder so that the atomic ratio W / (Sn+Zn+W) of the added element X is 0.01, except that, it is carried out in the same manner as in Example 1, and the Sn-Zn-O-based oxide sintered body of Example 3 is produced. . The relative density and resistivity of this processed body were measured by the same method as in Example 1. As a result, the relative density was 99.0%, and the resistivity was 0.11 Ω·cm. The conditions and results are shown in Table 1-1 and Table 1-2.

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Abstract

To provide: a Sn-Zn-O-based oxide sintered body with a high Sn concentration that is used as a sputtering target, and has mechanical strength and properties of high density and low resistance; and a method for producing the Sn-Zn-O based oxide sintered body. This Sn-Zn-O-based oxide sintered body with a high Sn concentration is characterized by including 0.75 to 0.9 of Sn in the Sn / (Zn+Sn) atomicratio, by including 0.001 to 0.1 of at least one type of additional element (X) selected from Nb, Ta, W, and Mo in the X / (Sn+Zn+X) atomic ratio, which is relative to the total amount of Sn, Zn, and the additional element (X), and in having a relative density of 95% or more and a specific resistance of 1 [Omega].cm or less. The Sn-Zn-O-based oxide sintered body with a high Sn concentration is alsocharacterized by being produced by being fired under conditions where a heating rate from 700 DEG C to a sintering temperature is 0.4 DEG C / min to 0.8 DEG C / min in an atmosphere of oxygen concentration in a furnace of 70 volume% or higher, the sintering temperature is 1300 DEG C to 1460 DEG C, and the firing time is 10 to 30 hours.

Description

technical field [0001] The present invention relates to a Sn-Zn- O-based oxide sintered body, in particular, relates to a Sn-Zn-O-based oxide sintered body capable of suppressing breakage during processing of the sintered body, breakage of a sputtering target during sputtering film formation, generation of cracks, etc. and methods of manufacture thereof. Background technique [0002] Transparent conductive films with high conductivity and high transmittance in the visible light region are not only used in solar cells, liquid crystal display elements, surface elements such as organic electroluminescence and inorganic electroluminescence, electrodes for touch panels, etc. It is also used in various anti-fog transparent heating elements such as automobile windows, heat-reflecting films for buildings, antistatic films, and refrigerated showcases. [0003] As a transparent conductive film, tin oxide (SnO) containing antimony or fluorine as a dopant is known. 2 ), zinc oxide Zn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/457C23C14/34
CPCC23C14/3414C04B35/457C04B35/62695C04B35/64C04B2235/77C04B2235/3251C04B2235/3284C04B2235/5436C04B2235/604C04B2235/658
Inventor 安东勋雄小泽诚五十岚茂
Owner SUMITOMO METAL MINING CO LTD