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Heat treatment device, heat treatment method, laser annealing device, and laser annealing method

A heat treatment device and laser annealing technology, applied in laser welding equipment, manufacturing tools, welding/welding/cutting items, etc., can solve the problems of circuit thermal damage, substrate surface temperature rise, etc., to reduce thermal damage and prevent temperature rise. Effect

Inactive Publication Date: 2018-10-23
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in recent years, substrates have gradually become thinner, and even if local heating is performed with laser light, the temperature of the substrate surface will rise, causing thermal damage to the circuit

Method used

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  • Heat treatment device, heat treatment method, laser annealing device, and laser annealing method
  • Heat treatment device, heat treatment method, laser annealing device, and laser annealing method
  • Heat treatment device, heat treatment method, laser annealing device, and laser annealing method

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Embodiment approach 1

[0036] Figure 1A and Figure 1B It is a configuration diagram showing the configuration of the heat treatment apparatus according to Embodiment 1 of the present invention. Figure 1A is a side view of the heat treatment apparatus, Figure 1B is a plan view of the heat treatment apparatus. figure 2It is a graph showing the activation rate obtained by the heat treatment apparatus of Embodiment 1. in addition, image 3 It is a partial enlarged view showing the configuration of the heat treatment apparatus according to Embodiment 1.

[0037] Such as Figure 1A and Figure 1B As shown, in the heat treatment apparatus of this embodiment, one or more laser oscillators 1 are provided. exist Figure 1A and Figure 1B In this example, two laser oscillators 1 are provided, but the present invention is not limited to this, and only one laser oscillator 1 may be provided, or three or more laser oscillators may be provided. The laser oscillator 1 oscillates to obtain laser light for...

Embodiment approach 2

[0060] In the configuration of the first embodiment described above, the laser oscillator 1 may be any known laser, and may not be a fiber transmission type LD laser. That is, any one of a solid-state laser, a gas laser, a fiber laser, and a semiconductor laser may be used as the laser oscillator 1 . However, in the case of non-fiber transmission type, an appropriate optical system 2 is required for each. In addition, any oscillation method can be applied regardless of a continuous oscillation type laser or a pulse oscillation type laser. In this case, since the optical path does not change within the distance from the laser oscillator 1 to the irradiation position, the configuration of the optical system 2 becomes simpler than that of the first embodiment.

Embodiment approach 3

[0062] In Embodiment 1 described above, the drive system 4 is provided with respect to the optical system 2 , but a drive system may be provided with respect to the object 5 to be processed. That is, in this Embodiment 2, if Figure 5A and Figure 5B As shown, a drive system 41 is provided for the object 5 to be processed. It should be noted, Figure 5A It is a side view of the heat treatment apparatus of this embodiment, Figure 5B is a plan view of the heat treatment apparatus. The driving system 41 is radially arranged in such a manner that the length direction is along the radial line of the turntable 3 . The drive system 41 moves the processed object 5 from the center 31 of the turntable 3 to the outside or from the outside to the center 31 along the radial direction of the turntable 3 . At this time, the position of the optical system 2 is fixed. In this way, in this embodiment, the position of the object 5 to be processed is moved by the drive system 41 with respe...

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Abstract

A heat treatment device of the present invention is provided with: a laser oscillator 1 that performs laser oscillation; one or more optical systems 2 that apply laser light to a subject 5 to be treated, said laser light having been oscillated by the laser oscillator 1; and a rotating table 3 on which the subject 5 is mounted. When a reaching temperature of the subject 5, said reaching temperaturebeing a temperature at which the activation rate of the subject 5 reaches a target value due to one-time laser light irradiation, is set as a first temperature, a second temperature that is lower than the first temperature is set as a target value of the reaching temperature of the subject 5, and the laser light is repeatedly applied from the optical systems 2 to the subject 5 two or more times.

Description

technical field [0001] The present invention relates to a heat treatment device, a heat treatment method, a laser annealing device and a laser annealing method, and in particular to a heat treatment device, a heat treatment method, a laser annealing device and a laser annealing method for performing heat treatment by irradiating an object with laser light. Background technique [0002] In the manufacturing process of a semiconductor device, it is sometimes necessary to heat-treat a semiconductor substrate to a desired depth. For example, Patent Document 1 discloses a method of manufacturing an insulated gate bipolar transistor (IGBT) used for switching electric power. According to this method, diffusion regions such as a base region and an emitter region, electrodes such as an emitter electrode and a gate electrode, and insulating films such as a gate insulator and an interlayer insulating film are formed on the surface of a conductive silicon substrate. Diffused areas such...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01L21/268
CPCH01L21/268H01L21/26513B23K26/0006B23K26/0604B23K26/0648B23K26/0823B23K26/0869B23K26/0876B23K26/705B23K26/352B23K2101/40B23K2103/56H01L21/324H01L21/67098H01L21/67248H01L21/68764B23K26/035B23K26/064B23K26/082B23K26/0608B23K26/0626B23K26/0665H01L21/67115
Inventor 物种武士川濑佑介凑忠玄竹野祥瑞永山贵久南竹春彦金田和德巽裕章
Owner MITSUBISHI ELECTRIC CORP
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