Image sensor and method of forming the same
A technology of image sensors and optoelectronic devices, which is applied in semiconductor devices, electric solid devices, radiation control devices, etc., can solve the problems of quantum conversion efficiency that needs to be improved, and achieve the effects of improving quantum conversion efficiency, improving performance, and improving light crosstalk
Active Publication Date: 2020-12-18
淮安西德工业设计有限公司
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[0004] Quantum conversion efficiency (QE, Quantum Efficiency) is one of the important indicators affecting the performance of image sensors, and the quantum conversion efficiency of existing back-illuminated image sensors still needs to be improved
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[0025] Such as figure 1 As shown, taking an RGB image sensor as an example, the transmittance (TR, transmittance) of different wavelengths of light on semiconductor substrates with different thicknesses gradually decreases as the thickness (TH, thickness) of the semiconductor substrate increases. In comparison, the light transmittance of red light r is higher than that of green light g, and the light transmittance of green light g is higher than that of blue light b. At present, the R / G / B pixels of the back-illuminated image sensor are produced in the silicon substrate with the same thickness (such as 2.5 μm ~ 3.0 μm), and the blue light b (light transmittance is about 0%) is almost completely absorbed, while some Red light r (light transmittance is about 20% to 30%) and green light (light transmittance is about 10% to 20%) penetrate the silicon substrate, which reduces the quantum conversion efficiency of light and also generates light issues such as crosstalk.
[0026] In ...
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The technical scheme of the invention discloses an image sensor and a formation method thereof. The image sensor comprises a semiconductor substrate and a shallow trench isolation structure, wherein the semiconductor substrate is divided into a first region and a second region, and photoelectric devices are formed in the semiconductor substrate in the first region and the second region respectively; the wavelength of light absorbed by the photoelectric device in the first region is longer than that of light absorbed by the photoelectric device in the second region; the surface of the semiconductor substrate is of a step-shaped surface; the surface of the semiconductor substrate in the first region is higher than the surface of the semiconductor substrate in the second region; and the shallow trench isolation structure is formed in the semiconductor substrate and located between the photoelectric devices. By virtue of the technical scheme, the quantum conversion efficiency of the imagesensor is improved.
Description
technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to an image sensor and a forming method thereof. Background technique [0002] An image sensor is a semiconductor device that converts light signals into electrical signals. Image sensors are classified into complementary metal oxide (CMOS) image sensors and charge coupled device (CCD) image sensors. CMOS image sensor has the advantages of simple process, easy integration of other devices, small size, light weight, low power consumption and low cost. Therefore, with the development of image sensing technology, CMOS image sensors are increasingly used in various electronic products instead of CCD image sensors. At present, CMOS image sensors have been widely used in still digital cameras, digital video cameras, medical imaging devices, and automotive imaging devices. [0003] CMOS image sensors include front illuminated (FSI) image sensors and back illuminated (B...
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IPC IPC(8): H01L27/146
CPCH01L27/14601H01L27/1464H01L27/14643H01L27/14683
Inventor 何延强林宗德黄仁德李晓明何玉坤
Owner 淮安西德工业设计有限公司