Semiconductor device and manufacturing method thereof

Abstract

The application discloses a semiconductor device and a manufacturing method thereof, which relate to the technical field of semiconductors. Wherein, the method includes: providing a substrate structure, the substrate structure comprising: a substrate; fins on the substrate; a hard mask layer on the fins; a first isolation material layer for isolating the fins, the upper surface of the first isolation material layer is substantially flush with the upper surface of the hard mask layer; etching back the first isolation material layer, Thereby forming a second isolation material layer whose upper surface is higher than the bottom surface of the hard mask layer; after etching back the first isolation material layer, performing an oxidation process or an annealing process; performing an oxidation process or an annealing process After that, the hard mask layer is removed; the second isolation material layer is etched back, so as to form an isolation region whose upper surface is lower than the upper surface of the fin. This application can achieve the rounding of the corners of the top of the fins.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the reduction of critical dimensions of metal oxide semiconductor field effect transistors (Metal Oxide Semiconductor Field Effect Transistor, MOSFET), the short channel effect (Short Channel Effect, SCE) becomes more and more serious. Fin field effect transistors (Fin Field Effect Transistors, FinFETs) have good gate control capabilities and can effectively suppress SCE. [0003] The inventors of the present application have found that the corner rounding of the top of the fin is important to the performance of the FinFET. If the rounding of the corners is poor, it will bring problems such as hump (dump) in the IV curve of FinFET, reverse short channel effect (Reverse Short Channel Effect, RSCE), large gate leakage current and poor reliability. [0004] The existing F...

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Problems solved by technology

If the rounding of the corners is poor, it will bring problems such as hump (dump) in the IV curve of FinFET, reverse short channel effect (Reverse Short Channel Effect, RSCE), large gate leakage current and poor reliability.

[0004] The existing FinFET manufacturing process cannot realize the rounding of the corners at the top of the fins. Therefore, it is necessary to propose a solution to realize the rounding of the corners at the top of the fins.

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