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Preparation method of lead-doped indium iodide polycrystalline film

A technology of indium iodide and thin film, which is applied in the field of preparation of lead-doped indium iodide polycrystalline thin film, can solve the problems of indium iodide single crystal research and application limitations, and cannot meet the requirements of large-area radiation imaging device preparation, etc. , to achieve the effect of increased dislocation density and micro-strain stress, reduced grain size, and uniform particles

Inactive Publication Date: 2018-11-23
YANSHAN UNIV
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Problems solved by technology

[0003] Due to the difficulties in the preparation of high-resistivity and large-volume indium iodide single crystals, and the small-volume indium iodide single crystals cannot meet the preparation requirements of large-area radiation imaging devices, the research and development of indium iodide single crystals Applications are somewhat limited

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  • Preparation method of lead-doped indium iodide polycrystalline film
  • Preparation method of lead-doped indium iodide polycrystalline film
  • Preparation method of lead-doped indium iodide polycrystalline film

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Embodiment Construction

[0031] Exemplary embodiments, features, and performance aspects of the present invention will be described in detail below with reference to the accompanying drawings. The same reference numbers in the figures indicate functionally identical or similar elements. While various aspects of the embodiments are shown in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

[0032] A preparation method of lead-doped indium iodide polycrystalline film, which specifically comprises the following steps:

[0033] S1. Synthesize lead-doped indium iodide polycrystal by two-temperature-zone gas-phase synthesis method, wherein the concentration of lead is 0.34 to 1.49%, and the sum of the concentrations of lead and indium is the same as the concentration of iodine, and the synthesized lead-doped indium iodide The specific method of indium polycrystalline is: Weigh the lead grains and indium blocks with a preset concentration ratio and put them into the q...

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Abstract

The invention belongs to the technical field of materials, and relates to a preparation method of a lead-doped indium iodide polycrystalline film. The method comprises the following specific steps: S1, synthesizing lead-doped indium iodide polycrystalline from lead, indium and iodine in a preset concentration ratio by a two-temperature-zone vapor phase synthesis method; S2, grinding the lead-dopedindium iodide polycrystalline into powder, and putting the powder into a crucible to serve as an evaporation source; S3, suspending a glass sheet 25cm above the crucible as an evaporation and precipitation substrate; S4, putting the crucible and the glass sheet into a thermal evaporation vacuum chamber, and controlling the back bottom vacuum degree of the chamber at 1.5*10<3>Pa or less; S5, during a film growth process, monitoring the heating rate and evaporation thickness in real time, heating the evaporation source to 50 to 90 DEG C at the rate of 20 DEG C per minute, controlling the film deposition rate at 0.5 to 2.0 Angstrom per second, and depositing to obtain a lead-doped indium iodide polycrystalline film of 800nm; S6, cooling the lead-doped indium iodide polycrystalline thin filmobtained in the step S5 to room temperature in order to finish preparation of the film.

Description

technical field [0001] The invention belongs to the technical field of materials, and relates to a preparation method of a lead-doped indium iodide polycrystalline thin film. Background technique [0002] An indium iodide (InI) single crystal has high resistivity, large carrier mobility lifetime product, and the gamma-ray detector made has high energy resolution and detection efficiency, and can be used and stored at room temperature And other advantages, making it a very promising material for room temperature nuclear radiation detectors, it is one of the new materials for room temperature nuclear radiation detectors that have been studied in recent years. [0003] Due to the difficulties in the preparation of high-resistivity and large-volume indium iodide single crystals, and the small-volume indium iodide single crystals cannot meet the preparation requirements of large-area radiation imaging devices, the research and development of indium iodide single crystals Applica...

Claims

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Application Information

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IPC IPC(8): C30B29/12C30B28/14C23C14/06C23C14/24
CPCC23C14/0694C23C14/24C30B28/14C30B29/12
Inventor 徐朝鹏孙璐田东升边飞王健王海燕
Owner YANSHAN UNIV
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