Position error detection method of magnetron sputtering chamber and tray

Abstract

The invention relates to a magnetron sputtering cavity and a pallet position error detection method realized via the magnetron sputtering cavity. The magnetron sputtering cavity comprises a cavity body and a pedestal, a rotating shaft, a transmission arm, a pallet and a detection sensor arranged in the cavity, the plane where the pedestal is positioned serves as a projection surface, a connectingline between the rotating shaft and the center of the pedestal in the projection surface is preset as lo, a position where the transmission arm is superposed with the lo is preset as a first limit position, and an included angle between the transmission arm and the lo in a second limit position is preset as phi; the distance L between the detection sensor and the rotating shaft satisfies the following relation that R-r<L<R+r; the included angle theta between a connecting line le between the detection sensor and the rotating shaft and the lo satisfies the following relation that 0<theta<phi; and the distance between the detection sensor and the pedestal center is greater than r, and the distance between the detection center and the pallet center when the transmission arm is in the second limit position is greater than r. Thus, the group of detection sensor is arranged in the set position, and the pallet position error can be detected accurately.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing equipment, in particular to a magnetron sputtering chamber and a method for detecting tray position errors realized by the magnetron sputtering chamber. Background technique [0002] Sputtering refers to the phenomenon that energetic particles (such as argon ions) bombard the surface of a solid, causing various particles on the surface, such as atoms, molecules or clusters, to escape from the surface of the object. In the magnetron sputtering device, the plasma is generated in the chamber, and the positive ions of the plasma are attracted by the negative electricity of the cathode, bombard the target in the chamber, knock out the atoms of the target, and deposit on the substrate. In the case of non-reactive sputtering, the gas is an inert gas such as argon. In reactive sputtering, both reactive and inert gases are used. Magnetron sputtering equipment is widely used in the fields of int...

AI Technical Summary

Problems solved by technology

[0010] The disadvantage of this prior art is that two sets of sensors need to be provided, and it can only roughly detect whether the tray has returned to the unshielded position, and the detection accuracy is not high, so there may be a problem in the process due to the offset of the tray relative to the transfer arm. A situation where the tray does not fully cover the pedestal, resulting in oxides falling on the pedestal when removing oxides from the target surface, making the pedestal unusable due to deposited metal

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