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Semiconductor device and method of forming the same

A semiconductor and device technology, which is applied in the field of semiconductor devices and their formation, can solve the problems of semiconductor device electrical properties that need to be improved, and achieve the effect of reducing contact resistance and improving performance

Active Publication Date: 2021-10-15
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the electrical performance of semiconductor devices composed of MOS transistors needs to be improved

Method used

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  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

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Experimental program
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Embodiment Construction

[0028] As mentioned in the background, the performance of semiconductor devices in the prior art is relatively poor.

[0029] A method for forming an N-type MOS transistor, comprising: providing a substrate; forming an interlayer dielectric layer, a gate structure, a source-drain doped region and a metal silicide layer, the gate structure is located on the substrate, and the source-drain doped region is respectively located In the substrate on both sides of the gate structure, the metal silicide layer is located on the surface of the source-drain doped region, and the interlayer dielectric layer covers the metal silicide layer, the gate structure and the substrate; The conductive plug is in contact with the metal silicide layer. The function of the metal silicide layer is to reduce the contact barrier between the conductive plug and the source-drain doped region, so as to reduce the contact resistance between the source-drain doped region and the conductive plug.

[0030] How...

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PUM

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Abstract

A semiconductor device and its forming method, wherein the method includes: providing a substrate, the substrate includes a first region, the first region is used to form an N-type transistor, the first region of the substrate has a first gate structure, the first There are first source-drain doped regions in the substrates on both sides of a gate structure; an electron tunneling layer is formed on the first source-drain doped region; and a first conductive plug is formed on the surface of the electron tunneling layer. The method improves the electrical performance of the semiconductor device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate base; a gate structure located on the surface of the semiconductor substrate, a source region located in the semiconductor substrate on one side of the gate structure and a drain region located in the semiconductor substrate on the other side of the gate structure . The working principle of the MOS transistor is: by applying a voltage to the gate structure, the current through the channel at the bottom of the gate structure is adjusted to generate a switching signal. [0003] However, the electrical performance of semiconductor devices composed of MOS transistors needs to be improved. Contents of the invention [0004] The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/0603H01L29/0684H01L29/66477H01L29/78H01L29/7833
Inventor 张海洋刘盼盼王士京
Owner SEMICON MFG INT (SHANGHAI) CORP