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A method for manufacture a side electrode partially covered

A side electrode and contact electrode technology, applied in the field of optoelectronics, can solve the problems of incompatibility, lack of stable performance and reliability of the side electrode preparation method, etc., to reduce capacitance, reduce nonlinear junction capacitance and contact resistance, and the preparation method is simple. Effect

Active Publication Date: 2018-12-21
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation process of the side electrodes is suitable for patch concave electrode network resistance, and is not suitable for the preparation of side electrodes of micro-nano electronic devices, so there is still no side electrode preparation method with stable performance and high reliability.

Method used

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  • A method for manufacture a side electrode partially covered
  • A method for manufacture a side electrode partially covered
  • A method for manufacture a side electrode partially covered

Examples

Experimental program
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Effect test

Embodiment 1

[0054] A method for preparing partially covered side electrodes, comprising the steps of:

[0055] A. Cleaning and drying for the first time: Clean the semiconductor raw material in MOS grade acetone solution with 50KHz ultrasonic wave for 5min, then use 50KHz ultrasonic wave in MOS grade isopropanol solution for 5min, and then use 50KHz ultrasonic wave in deionized water for 10min, to This was repeated 3 times; finally, it was blown dry with high-purity nitrogen;

[0056] B. The first photolithography: use photolithography technology to perform photolithography treatment on the cleaned and dried semiconductor raw materials, and photoetch the mesa pre-etching area to obtain a photoresist structure with an inclination angle;

[0057] In order to ensure that the pre-etched mesa structure is an inclined mesa, the following conditions are included: In the photolithography technology, the type of photoresist used is AZ6130, the thickness of the uniform layer is 3um, the pre-bakin...

Embodiment 2

[0069] A method for preparing partially covered side electrodes, comprising the steps of:

[0070] A. Cleaning and drying for the first time: Clean the semiconductor raw material in acetone solution with 20KHz ultrasonic wave for 5 minutes, then in isopropanol solution with 20KHz ultrasonic wave for 5 minutes, and then in deionized water with 20KHz ultrasonic wave for 10 minutes, repeat 3 times ; Finally, dry with high-purity nitrogen;

[0071] B. The first photolithography: use photolithography technology to perform photolithography treatment on the cleaned and dried semiconductor raw materials, and photoetch the mesa pre-etching area to obtain a photoresist structure with an inclination angle;

[0072] In order to ensure that the pre-etched mesa structure is a slanted mesa, the following conditions are included: In the photolithography technology, the type of photoresist used is AZ5214, the thickness of the layer is 1.5um, the pre-baking time is 60s, the exposure time is 3...

Embodiment 3

[0083] A method for preparing partially covered side electrodes, comprising the steps of:

[0084] A. Cleaning and drying for the first time: The semiconductor raw material is cleaned in acetone solution with 90KHz ultrasonic wave for 5 minutes, then in isopropanol solution with 90KHz ultrasonic wave for 5 minutes, and then in deionized water with 90KHz ultrasonic wave for 10 minutes, repeating this 3 times ; Finally, dry with high-purity nitrogen;

[0085] B. The first photolithography: use photolithography technology to perform photolithography treatment on the cleaned and dried semiconductor raw materials, and photoetch the mesa pre-etching area to obtain a photoresist structure with an inclination angle;

[0086] In order to ensure that the pre-etched mesa structure is an inclined mesa, the following conditions are included: In the photolithography technology, the type of photoresist used is AZ4620, the thickness of the uniform layer is 5um, the pre-baking time is 140s, th...

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Abstract

The invention discloses a method for preparing a side electrode partially covered, belonging to the technical field of optoelectronics. The method includes: A. first cleaning and drying, B. first photoetching, C. first etching, D. second cleaning and drying, E. depositing a passivation lay, F. second photoetching, G. second etching, H. depositing an electrode, I. etching, and J. annealing. By adding a pre-etching step, a part of the contact metal electrode on the side of the mesa is removed while the passivation layer is removed, so that a part of the side electrode is covered, and the prepared electrode structure satisfies low contact non-linear junction capacitance and contact resistance on the premise of ensuring good adhesion contact quality; at that same time, the preparation method is simple and the reliability of the electrode is high.

Description

technical field [0001] The invention relates to a method for preparing side electrodes, in particular to a method for preparing partial coverage of side electrodes on micro-nano electronic devices, and belongs to the field of optoelectronic technology. Background technique [0002] Micro-nano electronic devices refer to electronic devices with micro-nano scale and specific functions designed and prepared using micro-nano-level processing and preparation technologies, such as lithography, epitaxy, micro-fabrication, self-assembly growth, and molecular synthesis technologies. . Among them, nanotechnology is a high-tech discipline that studies and applies the laws of motion and characteristics of electrons, atoms, and molecules in the 0.1-100um scale space. Its goal is to use single atoms and molecules to manufacture product. The scientific and technological circles at home and abroad have generally believed that nanotechnology has become the most dynamic research field in to...

Claims

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Application Information

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IPC IPC(8): B81C1/00
CPCB81C1/00015B81C1/00404
Inventor 王文杰谢武泽李舒啸安宁李倩曾建平
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS