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Bi1/2Na1/2TiO3 high-dielectric ceramic capacitor material with high-temperature stability and preparation method of Bi1/2Na1/2TiO3 high-dielectric ceramic capacitor material

A ceramic capacitor and sodium bismuth titanate-based technology are applied in the field of high dielectric ceramic capacitor materials and their preparation, which can solve the problems of low dielectric permittivity and difficulty in extending the working temperature range, and achieve a simple preparation method, excellent performance and good performance. The effect of the application foreground

Inactive Publication Date: 2018-12-28
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] It is difficult to extend the working temperature range (TCC≤±15%) of existing ceramic materials to 400°C and the dielectric relative permittivity is low (ε r <2000) and other problems, the object of the present invention is to provide a kind of ceramic capacitor dielectric material with high temperature stability and high dielectric constant and its preparation method, to meet the needs of future capacitors in high temperature applications

Method used

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  • Bi1/2Na1/2TiO3 high-dielectric ceramic capacitor material with high-temperature stability and preparation method of Bi1/2Na1/2TiO3 high-dielectric ceramic capacitor material
  • Bi1/2Na1/2TiO3 high-dielectric ceramic capacitor material with high-temperature stability and preparation method of Bi1/2Na1/2TiO3 high-dielectric ceramic capacitor material
  • Bi1/2Na1/2TiO3 high-dielectric ceramic capacitor material with high-temperature stability and preparation method of Bi1/2Na1/2TiO3 high-dielectric ceramic capacitor material

Examples

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Effect test

Embodiment 1

[0043] 1) According to the chemical composition (1-x)Bi 1 / 2 Na 1 / 2 TiO 3 -xPbMg 1 / 3 Nb 2 / 3 o 3 , x = 0.1 in the metal atom molar ratio and take into account the purity of the raw materials and weigh Bi respectively 2 o 3 , NaHCO 3 、TiO 2 , Pb 3 o 4 , Nb 2 o 5 And basic magnesium carbonate as raw material;

[0044] 2) The weighed Bi 2 o 3 , NaHCO 3 、TiO 2 , Pb 3 o 4 , Nb 2 o 5 Mix it with basic magnesium carbonate and put it in a nylon ball mill tank, use absolute ethanol as the medium, mix it with zirconia balls for 24 hours, the ratio of solid to liquid balls is 1:2:4, and pass through a 40-mesh sieve after drying at 80°C , the briquette was heated to 800°C for high-temperature calcination synthesis, kept for 2 hours, and the heating rate was 2°C / min;

[0045] 3) Grind 100 g of the powder synthesized in step (2), mix and mill it with zirconia balls for 48 h, dry it at 80° C. and grind it into powder, and select 6 g of 7 wt % polyvinyl alcohol aqueous solu...

Embodiment 2

[0047] 1) According to the chemical composition (1-x)Bi 1 / 2 Na 1 / 2 TiO 3 -xPbMg 1 / 3 Nb 2 / 3 o 3 , x = 0.3 metal atom molar ratio and take Bi by weighing respectively after considering raw material purity 2 o 3 , NaHCO 3 、TiO 2 , Pb 3 o 4 , Nb 2 o 5 And basic magnesium carbonate as raw material;

[0048] 2) The weighed Bi 2 o 3 , NaHCO 3 、TiO 2 , Pb 3 o 4 , Nb 2 o 5 Mix it with basic magnesium carbonate and put it in a nylon ball mill tank, use absolute ethanol as the medium, mix it with zirconia balls for 24 hours, the ratio of solid to liquid balls is 1:2:4, and pass through a 40-mesh sieve after drying at 80°C , the briquette was heated to 800°C for high-temperature calcination synthesis, kept for 2 hours, and the heating rate was 2°C / min;

[0049] 3) Grind 100 g of the powder synthesized in step (2), mix and mill it with zirconia balls for 48 h, dry it at 80° C. and grind it into powder, and select 6 g of 7 wt % polyvinyl alcohol aqueous solution as the ...

Embodiment 3

[0051] 1) According to the chemical composition (1-x)Bi 1 / 2 Na 1 / 2 TiO 3 -xPbMg 1 / 3 Nb 2 / 3 o 3 , x = 0.2 metal atom molar ratio and take Bi by weighing respectively after considering raw material purity 2 o 3 , NaHCO 3 、TiO 2 , Pb 3 o 4 , Nb 2 o 5 And basic magnesium carbonate as raw material;

[0052] 2) The weighed Bi 2 o 3 , NaHCO 3 、TiO 2 , Pb 3 o 4 , Nb 2 o 5 Mix it with basic magnesium carbonate and put it in a nylon ball mill tank, use absolute ethanol as the medium, mix it with zirconia balls for 24 hours, the ratio of solid to liquid balls is 1:2:4, and pass through a 40-mesh sieve after drying at 80°C , the briquette was heated to 800°C for high-temperature calcination synthesis, kept for 2 hours, and the heating rate was 2°C / min;

[0053] 3) Grind 100 g of the powder synthesized in step (2), mix and mill it with zirconia balls for 48 h, dry it at 80° C. and grind it into powder, and select 6 g of 7 wt % polyvinyl alcohol aqueous solution as the ...

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Abstract

The invention relates to Bi1 / 2Na1 / 2TiO3 high-dielectric ceramic capacitor material with high-temperature stability and a preparation method of the Bi1 / 2Na1 / 2TiO3 high-dielectric ceramic capacitor material. The chemical composition of the Bi1 / 2Na1 / 2TiO3 high-dielectric ceramic capacitor material with high-temperature stability is (1-x)Bi1 / 2Na1 / 2TiO(3-x)PbMg1 / 3Nb2 / 3O3, and x is larger than or equalto 0.1 and smaller than or equal to 0.3.

Description

technical field [0001] The invention relates to a bismuth sodium titanate-based high-temperature stable high-dielectric ceramic capacitor material and a preparation method thereof, belonging to the field of electronic components. Background technique [0002] In recent years, with the development of technology and the increasing demand for electronic equipment, more and more applications require capacitors to work properly in extreme environments. In the fields of oil drilling, automobile industry, aerospace and other fields, the supporting capacitors in their working circuits must work at a temperature higher than 200 ° C, which greatly exceeds the upper limit of the operating temperature of traditional X7R ceramic capacitors. Therefore, it is urgent to study a A ceramic capacitor material with a higher applicable temperature range (200-300°C) and a capacitance temperature change rate of less than ±15% to meet the current high-temperature electronic integrated devices and r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/475
CPCC04B35/475C04B2235/3201C04B2235/3206C04B2235/3255C04B2235/3296C04B2235/6562C04B2235/6567
Inventor 王根水胡蕃廷陈学锋董显林
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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