Transistor based on nanoribbon and preparation method thereof

Abstract

The present invention discloses a transistor based on a nanoribbon. The transistor comprises a substrate; a gate electrode arranged on the substrate; a gate dielectric layer arranged on the gate electrode, wherein the gate dielectric layer comprises a first gate dielectric layer and a second gate dielectric layer which is located at the surface of the first gate dielectric layer; a source electrode and a drain electrode which are arranged on the first gate dielectric layer, wherein the surfaces of the source electrode and the drain electrode are levelled with the surface of the second gate dielectric layer; and an active layer arranged on the source electrode, the drain electrode and the second gate dielectric layer, wherein the active layer comprises at least one black phosphorus nanoribbon which comprises materials configured to open a band gap.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, in particular to a nanoribbon-based transistor. Background technique [0002] Compared with traditional bulk materials, two-dimensional materials are widely used in semiconductor devices due to their superior optical, electrical and thermal properties. The most typical representative of two-dimensional materials is graphene, however, the characteristic of zero band gap hinders the application of graphene in electronic devices such as transistors. In this regard, some two-dimensional materials with high electron mobility and band gap (for example, molybdenum disulfide (MoS 2 ), black phosphorus (BN), black phosphorus, etc.) have played an important role in transistor devices instead of graphene. [0003] With the development of device miniaturization, MoS 2 , BN, black phosphorus, etc. also need to be reduced accordingly. However, when MoS 2 When two-dimensional materials su...

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Problems solved by technology

The most typical representative of two-dimensional materials is graphene, however, the characteristic of zero band gap hinders the application of graphene in electronic devices such as transistors

[0003] With the development of device miniaturization, MoS 2 , BN, black phosphorus, etc. also need to be reduced accordingly. However, when MoS 2 When two-dimensional materials such as BN, BN, and black phosphorus are reduced to the size of nanoribbons, their semiconductor properties will disappear, that is, the nanoribbon bandgap of two-dimensional materials is zero, which is no longer suitable for the preparation of transistors.

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