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Semiconductor structure and forming method thereof

A technology of semiconductor and storage structure, applied in the field of semiconductor structure and its formation, can solve the problem that the performance of the semiconductor structure needs to be improved, etc.

Inactive Publication Date: 2019-01-08
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the performance of semiconductor structures formed by existing technologies needs to be improved

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Experimental program
Comparison scheme
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Embodiment Construction

[0026] As mentioned in the background, semiconductor structures perform poorly.

[0027] figure 1 A schematic diagram of a semiconductor structure.

[0028] Please refer to figure 1 , providing a substrate 100, the surface of the substrate 100 has a stacked layer 101; forming a channel hole 110 penetrating through the stacked layer 101 and a groove 102 in the substrate 100 at the bottom of the channel hole 110, the bottom of the groove 102 has a first A fractal layer 103a and a first oxide layer 103b located on the surface of the first fractal layer 103a.

[0029] In the above semiconductor structure, in order to form the channel hole 110 with a high aspect ratio, it is easy to form the groove 102 in the substrate 100 at the bottom of the channel hole 110 . The forming process of the channel hole 110 and the groove 102 includes: a reactive ion etching process, and the reactive ion etching process includes plasma bombardment. Due to the high bombardment energy of the ions a...

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Abstract

A method for forming a semiconductor structure includes provide a substrate having a stacked layer on a surface of that substrate; Removing a part of the stacked layer to form a channel hole penetrating the stacked layer and a groove located in the substrate at the bottom of the channel hole, wherein the groove has a first fragmented layer and a first oxide layer located on the surface of the first fragmented layer, and the first fragmented layer is different from the lattice structure of the substrate; Removing the first oxide layer and the first fragmented layer by a first plasma treatment process; After the first plasma treatment process, an epitaxial layer is epitaxially grown in the groove, and the epitaxial layer is filled with the groove; A memory structure is for on that surface ofthe epitaxial layer, and the memory structure is filled with channel holes. The method can improve the performance of the semiconductor structure.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] Flash memory (Flash Memory) is also called flash memory. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Therefore, it has become the mainstream memory of non-volatile memory. According to different structures, flash memory is divided into NOR Flash Memory and NAND Flash Memory. Compared with NAND flash memory, NAND flash memory can provide higher cell density, higher storage density, and faster writing and erasing speed. [0003] With the development of planar flash memory, the production process of semiconductors has made great progress. However, the current development of planar flash memory has encountered various challenges: p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11578H10B43/35H10B43/20
CPCH10B43/35H10B43/20
Inventor 罗流洋陆智勇刘隆冬耿静静赵治国霍宗亮
Owner YANGTZE MEMORY TECH CO LTD