Manufacturing method of metal barrier layer, metal interconnection structure and manufacturing method thereof

Abstract

The technical scheme of the invention discloses a manufacturing method of a metal barrier layer, which adopts an atomic layer deposition process to prepare the metal barrier layer, and respectively arranges a semiconductor substrate in an atomic layer deposition chamber; And the first gas phase precursor containing N, a second gas phase precursor containing Ti, the third gas phase precursor containing N, The fourth vapor phase precursor containing Zr flows to the semiconductor substrate in the atomic layer deposition chamber, and the atomic layer deposition chamber is purged with an inert gasafter each introduction of the first vapor phase precursor, the second vapor phase precursor, the third vapor phase precursor, and the fourth vapor phase precursor to remove the remaining gas and reaction by-products of the reaction. The first vapor phase precursor, the second vapor phase precursor, and the fourth vapor phase precursor are purged with an inert gas. The method improves the thickness uniformity of the metal barrier layer. In addition, the technical proposal of the invention also provides a metal interconnection structure and a manufacturing method thereof, and the metal barrierlayer of the metal interconnection structure is prepared by adopting the process.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing technology, and in particular relates to a method for manufacturing a metal barrier layer, a metal interconnection structure and a method for manufacturing the same. Background technique [0002] When making semiconductor integrated circuits, it is usually necessary to make metal interconnection structures for electrically connecting semiconductor devices. The metal interconnection structure is usually made in an insulating material layer, which requires manufacturing a trench (trench) or a connecting hole on the insulating material layer, and then depositing metal in the trench or connecting hole, the deposited metal is It is a metal interconnection wire, and copper is generally selected as the metal interconnection wire material. [0003] When metal copper is selected as the metal interconnect material, a metal barrier layer is usually deposited between the metal interconnec...

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Problems solved by technology

[0004] The technical problem to be solved by the technical solution of the present invention is that the existing metal barrier layer manufacturing method is easy to form over-deposition in the opening of the trench or connection hole, thus resulting in the bottom and sidewall coverage of the metal barrier layer in the trench or connection cavity. Defects that reduce the thickness uniformity of the metal barrier layer

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