A flexible transient silicon thin film phototransistor and its manufacturing method
A technology of phototransistor and fabrication method, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of inability to obtain light with a large angle of incidence, and achieve the purpose of suppressing the Fermi level pinning effect, promoting growth, and reducing light. reflection effect
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Embodiment 1
[0033] Example 1: Preparation of a flexible transient silicon thin film phototransistor with a titanium dioxide insertion layer thickness of 0.5 nm.
[0034] Step 1, spin coating on the flexible transient substrate to prepare the adhesion layer.
[0035] Indium tin oxide with a thickness of 100 nm and polylactic acid with a thickness of 200 μm are selected as flexible transient substrates, such as figure 2 (a), using a spin-coating process at a speed of 7000r / s, spin-coat SU-8 photoresist with a thickness of 1 μm on a flexible transient substrate to form an adhesion layer, such as figure 2 (b), used to bond the silicon thin film to the flexible transient substrate, and as the gate dielectric of the phototransistor.
[0036] Step 2, transfer printing on the adhesive layer to prepare a silicon film.
[0037] Using transfer printing technology to prepare on the adhesion layer with a thickness of 190nm and a phosphorus doping concentration of 10 15 cm -3 , the silicon thin f...
Embodiment 2
[0062] Example 2: Preparation of a flexible transient silicon thin film phototransistor with a titanium dioxide insertion layer thickness of 0.7 nm.
[0063] In the first step, an adhesive layer is prepared by spin coating on the flexible transient substrate.
[0064] Indium tin oxide with a thickness of 115 nm and polylactic acid with a thickness of 240 μm are selected as flexible transient substrates, such as figure 2 (a);
[0065] Spin-coat SU-8 photoresist with a thickness of 1.3 μm on the flexible transient substrate at a speed of 5000 r / s to form an adhesion layer, such as figure 2 (b).
[0066] Step 2, transfer printing on the adhesive layer to prepare a silicon film.
[0067] Using transfer printing technology to prepare a thickness of 195nm on the adhesion layer, the phosphorus doping concentration is 10 15 cm -3 , the silicon thin film active layer with a crystal orientation of is used as the active layer of the device, such as figure 2 (c), the transfer pr...
Embodiment 3
[0085] Example 3: Preparation of a flexible transient silicon thin film phototransistor with a titanium dioxide insertion layer thickness of 1 nm.
[0086] In step A, the adhesive layer is prepared by spin coating on the flexible transient substrate.
[0087] Indium tin oxide with a thickness of 125 nm and polylactic acid with a thickness of 280 μm are selected as flexible transient substrates, such as figure 2 (a);
[0088] Spin-coat SU-8 photoresist with a thickness of 1 μm on the flexible transient substrate at a speed of 4000 r / s to form an adhesion layer, such as figure 2 (b).
[0089] Step B, transfer printing on the adhesive layer to prepare a silicon film.
[0090] Using transfer printing technology to prepare a thickness of 200nm on the adhesion layer, the phosphorus doping concentration is 10 15 cm -3 , the silicon thin film active layer with a crystal orientation of is used as the active layer of the device, such as figure 2 (c), the transfer preparation p...
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Abstract
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