Unlock instant, AI-driven research and patent intelligence for your innovation.

Scanner, correction system, and method thereof

A calibration method and scanner technology, which can be applied to TV system parts, instruments, electric solid devices, etc., can solve problems such as non-linear overlay measurement errors that cannot be compensated

Active Publication Date: 2019-02-05
TAIWAN SEMICON MFG CO LTD
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is worth noting that the current system uses registration marks that can only compensate for linear overlay errors, and the registration marks cannot compensate for non-linear overlay errors, such as errors in the Z axis

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Scanner, correction system, and method thereof
  • Scanner, correction system, and method thereof
  • Scanner, correction system, and method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are described below to simplify the context of this disclosure. Of course, these examples are examples only and are not intended to be limiting. For example, the present disclosure may repeat element symbols and / or letters in each instance. This repetition is for simplicity and does not indicate a relationship between the various embodiments and / or configurations discussed.

[0014] Further, for convenience of description, spatially relative terms (such as "under", "below", "lower", "above", "upper" and the like may be used herein to describe an element illustrated in the figures. The relationship of a feature or feature to another element (or elements) or feature (or features). Spatially relative terms are intended to encompass different orientations of elements in use or operation in addit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a scanner, a correction system and a method thereof. The scanner includes a light source configured to apply a light to a backside of a wafer. The light is reflected from the backside of the wafer. A first mirror is configured to receive the light from the backside of the wafer and reflect the light. A sensor is configured to receive the light from the first mirror and generate an output signal indicative of a backside topography of the wafer.

Description

technical field [0001] Embodiments of the present invention relate to a wafer topography correction device, system and method. Background technique [0002] Integrated circuits (ICs) are generally fabricated through multiple process steps in semiconductor wafer fabrication equipment, wherein each process step deploys a patterned layer on the wafer. For an integrated circuit to function properly, these patterned layers must be precisely aligned with each other. Misalignment between patterned layers can lead to short circuits or connection failures, severely impacting component yield. Misalignment measurement (eg, overlay metrology (OVL)) between patterned layers on a wafer is one of the most important processes in manufacturing integrated circuit devices. Specifically, overlay metrology refers to measuring the alignment accuracy of a patterned layer relative to another patterned layer adjacent to it. As the complexity of integrated circuits increases, overlay measurement b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L23/544
CPCH01L21/67242H01L21/67259H01L23/544H01L2223/54426H01L21/67288H01L21/681H01L21/682G06T2207/10152G06T2207/30148G06T7/0004H04N23/56
Inventor 林正穆廖啟宏戴逸明杨岳霖
Owner TAIWAN SEMICON MFG CO LTD