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GaN-Based cascade power device and packaging method thereof

A power device and power technology, which is applied in the field of semiconductor devices, GaN-based cascaded power devices and their packaging, can solve problems such as short circuit and direct connection, and achieve the effects of good repeatability, simple process, and easy upgrading

Pending Publication Date: 2019-02-12
ZHONGSHAN INST OF MODERN IND TECH SOUTH CHINA UNIV OF TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the depletion-mode GaNHEMT is a normally-on device, it needs to be turned off by negative pressure when used, and there is a potential danger of short-circuit through

Method used

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  • GaN-Based cascade power device and packaging method thereof
  • GaN-Based cascade power device and packaging method thereof
  • GaN-Based cascade power device and packaging method thereof

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Embodiment Construction

[0033] For a better understanding of the present invention, the present invention will be further described below in conjunction with the accompanying drawings and examples, but the embodiments of the present invention are not limited thereto. Those skilled in the art can refer to the prior art to realize.

[0034] refer to figure 1 , a GaN-based cascaded power device, including: large gate width GaN-based power chip 2, silicon-based power MOS chip 1, 125 μm aluminum inner lead 8, 38 μm copper inner lead 7, TO-220 frame 4, small copper Substrate 3, halogen-free molding compound 9, conductive silver paste 5 and insulating glue 6; among them, TO-220 frame 4 is a T-220FL frame, including a rectangular base island with a size of 6.0mm×8.8mm, and a base extending from the base island The S pole of the pin, the G pole of the pin drawn out of the plastic package at the bottom left of the base island, and the D pole of the pin drawn out of the plastic package at the bottom right of t...

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Abstract

The invention discloses a GaN-based cascade power device and a packaging method thereof. The GaN-based cascade power device comprises a large-gate-width GaN-based power chip, a silicon-based power MOS(metal oxide semiconductor) chip, a TO-220 frame, a small copper substrate, conductive silver and insulating glue. The large-gate-width GaN-based power chip is transverse-structured depleting GnN-based power chip with high voltage resistance; the silicon-based power MOS chip is a vertical-structured reinforced silicon-based power MOS chip. The silicon-based power MOS chip is connected with the small copper substrate via the conductive sliver paste; the small copper substrate is connected with an island of the TO-220 frame; the large-gate-width GaN-based power chip is fixed to the island of the TO-220 frame via insulating glue. The cascode manner is introduced herein, the large-gate-width GaN-based power chip and the silicon-based power MOS chip are combined, and the reinforced GaN-based power device with wide practicable range is formed.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to semiconductor devices, in particular to a GaN-based cascaded power device and a packaging method thereof, which are suitable for applications such as high-voltage and high-power electronic devices. Background technique [0002] With the development of modern weaponry and aerospace, nuclear energy, communication technology, automotive electronics, and switching power supplies, higher requirements are placed on the performance of semiconductor devices. As a typical representative of wide bandgap semiconductor materials, GaN-based materials have the characteristics of large bandgap width, high electron saturation drift velocity, high critical breakdown field strength, high thermal conductivity, good stability, corrosion resistance, and radiation resistance. Used in the production of high temperature, high frequency and high power electronic devices. In addition, GaN also has ...

Claims

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Application Information

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IPC IPC(8): H01L25/18H01L23/495H01L21/603
CPCH01L24/83H01L24/85H01L25/18H01L23/49513H01L23/49562H01L2224/85201H01L2224/83203H01L2224/48091H01L2224/48137H01L2224/49111H01L2924/00014
Inventor 王洪陈泽亮周泉斌高升
Owner ZHONGSHAN INST OF MODERN IND TECH SOUTH CHINA UNIV OF TECH
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