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Method of manufacturing semiconductor device

A semiconductor and gas technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that cannot completely avoid redundant time, limit process throughput, etc.

Inactive Publication Date: 2019-02-15
HUAIAN IMAGING DEVICE MFGR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of sequentially forming multiple metal wiring layers, the existing process flow still cannot completely avoid redundant time (that is, the waiting time of the wafer to be processed), thereby limiting the throughput of the entire process flow

Method used

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  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device

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Embodiment Construction

[0020] Various exemplary embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise.

[0021] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way intended as any limitation of the disclosure, its application or uses. That is, the structures and methods herein are presented by way of example to illustrate various embodiments of the structures and methods of this disclosure. However, those skilled in the art will appreciate that they illustrate merely exemplary, and not exhaustive, ways in which the disclosure may be practiced. Furthermore, the figures are not necessarily to scale and some features may be exaggerated to show details of...

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PUM

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Abstract

The disclosure relates to a method of manufacturing a semiconductor device. The method includes: providing a substrate, forming a first dielectric layer over the substrate, and forming a first metal layer in the first dielectric layer; forming a second dielectric layer on the first dielectric layer and the first metal layer; forming a through hole and a groove in the second dielectric layer, wherein a portion of the groove is disposed over the through hole and is in communication therewith, and a portion of the first metal layer is exposed through the bottom of the through hole; carrying out pre-cleaning on the portion, which is of the first metal layer and is exposed through the bottom of the through hole, in a chamber; and forming a barrier layer on bottoms and sidewalls of the through hole and the groove and an an upper surface of the second dielectric layer in the chamber.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a method for manufacturing a semiconductor device and a semiconductor device obtained by the method. Background technique [0002] In the manufacturing process of a semiconductor device, it is necessary to form multiple metal wiring layers and electrically connect the multiple metal wiring layers to each other. In the process of sequentially forming multiple metal wiring layers, the existing process flow still cannot completely avoid redundant time (ie, waiting time of wafers to be processed), thereby limiting the throughput of the entire process flow. [0003] There is therefore a need for new techniques. Contents of the invention [0004] One of the objects of the present disclosure is to provide a novel method of manufacturing a semiconductor device and a semiconductor device manufactured by the method. [0005] According to one aspect of the present disclosure,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76807H01L21/76814H01L21/76831H01L21/76834
Inventor 闫浩吴孝哲林宗贤吴龙江熊建锋杨基磊
Owner HUAIAN IMAGING DEVICE MFGR CORP