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Integrated system of nitride flexible substrate construction and epitaxy

A flexible substrate and nitride technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of destroying two-dimensional materials, and achieve the effect of avoiding pollution and avoiding damage

Inactive Publication Date: 2019-02-19
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the technical problem that the pretreatment of the substrate surface by hydrogen gas will destroy the two-dimensional material, the present invention provides an integrated system for the construction and epitaxy of flexible nitride substrates, realizes the construction and epitaxy of flexible nitride substrates, and solves the problem of nitride substrates. Stress and defect issues in materials, providing growth systems for high-quality nitride materials

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  • Integrated system of nitride flexible substrate construction and epitaxy

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Effect test

Embodiment 1

[0031] Such as figure 1 As shown, firstly, the two-dimensional material growth chamber 1 is designed, and the chamber needs to meet the vacuum degree of 10 -4 Pa. The first heating system 4 installed in the two-dimensional material growth chamber 1 selects a graphite heating platform, and the heating temperature is up to 1600°C. The first sample stage 5 is designed as a graphite sample stage that can hold a 2inch circular wafer substrate.

[0032] Secondly, the vacuum interconnection chamber 2 needs to meet the vacuum degree of 10 in the chamber. -2 Pa. A mechanical transmission device is installed therein, and its two telescopic arms 9 are respectively directed to the two-dimensional material growth chamber 1 and the epitaxial layer growth chamber 3, the telescopic dimension is 0.5 meters, and the rotation angle of the rotary table 8 is 360°, and the samples carried The size is 2inch.

[0033] Third, design the epitaxial layer growth chamber 3, which needs to meet the va...

Embodiment 2

[0035] Such as figure 1 As shown, firstly, the two-dimensional material growth chamber 1 is designed, and the chamber needs to meet the vacuum degree of 10 -4 Pa. The first heating system 4 installed in the two-dimensional material growth chamber 1 selects a tungsten heating platform, and the heating temperature is up to 1700°C. The first sample stage 5 is designed as a graphite sample stage that can hold a 4inch circular wafer substrate.

[0036] Secondly, the vacuum interconnection chamber 2 needs to meet the vacuum degree of 10 in the chamber. -2 Pa. A mechanical transmission device is installed therein, and its two telescopic arms 9 point to the two-dimensional material growth chamber 1 and the epitaxial layer growth chamber 3 respectively, the telescopic dimension is 1.5 meters, and the rotation angle of the rotary table 8 is 360°, and the samples carried The size is 4inch.

[0037] Third, design the epitaxial layer growth chamber 3, which needs to meet the vacuum de...

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Abstract

The invention discloses an integrated system of nitride flexible substrate construction and epitaxy, solves the problem that a two-dimensional material can be damaged when hydrogen is used to pretreatthe surface of a substrate, and belongs to the technical field of growth of semiconductor materials. The integrated system herein comprises a two-dimensional material growth chamber, an epitaxial layer growth chamber, a vacuum interconnect chamber allowing the two-dimensional material growth chamber to be communicated with the epitaxial layer growth chamber; vacuum degree of the vacuum interconnect chamber matches with that of the two-dimensional material growth chamber and that of the epitaxial layer growth chamber. The integrated system herein has the advantages that transfer of a flexiblesubstrate in vacuum is guaranteed, pollution of the flexible substrate by external environment is avoided, damage to the flexible substrate due to the removal of pollutants is avoided, and a high-quality nitride epitaxial layer can be directly grown by epitaxy.

Description

technical field [0001] The invention relates to the technical field of semiconductor material growth, in particular to an integrated system for the construction and epitaxy of a nitride flexible substrate. Background technique [0002] Nitride, as an important component of three generations of semiconductor materials, plays an increasingly important role in national production and life. It is used in light-emitting diodes (LEDs), laser diodes (LDs), photodetectors (PDs), microwave radio frequency devices and Partial applications have been obtained in electronic devices and other fields. [0003] At present, the usual method used in the preparation of nitride semiconductor device materials is epitaxial growth. Due to the lack of homogeneous substrates, the homoepitaxial growth process is not yet mature, and heterogeneous substrates are usually used for heteroepitaxial preparation methods. However, the lattice mismatch and thermal mismatch brought about by heteroepitaxy will...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67017
Inventor 黎大兵贾玉萍孙晓娟蒋科石芝铭刘贺男贲建伟
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI