Light-emitting device based on graphene and polycyclic silver nano film electrode and its preparation method
A technology of thin-film electrodes and light-emitting devices, applied in electrical components, semiconductor devices, circuits, etc., can solve problems such as the decline of the luminous efficiency of LED chips
Active Publication Date: 2020-10-23
SOUTH CHINA NORMAL UNIVERSITY
View PDF9 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, when the light emitted by the LED chip exits the chip, a considerable part of the light is reflected by the interface between the chip and the outside world, resulting in a decrease in the luminous efficiency of the LED chip.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0036] The present invention will be described in further detail below.
[0037] like figure 1 Shown is a schematic structural view of a light-emitting device based on graphene and polycyclic silver nano-film electrodes of the present invention, which includes a substrate 9, which can be a sapphire substrate, a buffer layer 8 positioned on the upper surface of the substrate 9, and a buffer layer The layer 8 may be an undoped GaN layer, the thickness of the undoped GaN layer is 25nm, the N-type layer 7 on the buffer layer 8, the N-type layer 7 is an N-GaN layer, and the thickness of the N-GaN layer is 2 μm, The multi-quantum well layer 6 covering the N-type layer 7, the multi-quantum well layer can be 10 periods of InGaN / GaN, the thickness of the multi-quantum well layer 6 is 10nm, and the electron blocking layer covering the multi-quantum well layer 6 3. The electron blocking layer 3 is AlGaN / GaN with a thickness of 10nm. The P-type layer 2 located on the electron blocking la...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to a luminescent device based on graphene and a polycyclic silver nano-film electrode and a preparation method of the luminescent device. The luminescent device comprises a substrate, a buffering layer, an N-shaped layer, a multiple quantum well layer, an electronic blocking layer, a P-shaped layer and a micro-array conductive electrode layer, the buffering layer is positioned on the upper surface of the substrate, the N-shaped layer covers the buffering layer, the multiple quantum well layer covers the N-shaped layer, the electronic blocking layer covers the multiple quantum well layer, the P-shaped layer covers the electronic blocking layer, the micro-array conductive electrode layer covers the P-shaped layer comprises graphene and a polycyclic silver nano-film electrode. The conductive electrode layer of the luminescent device combines the graphene and a metal Ag thin film, the metal Ag thin film is graphically processed, luminescent efficiency is greatly improved by the surface plasmon polariton effect, resistance values are reduced, heat generation is decreased, and good cooling effects are achieved.
Description
technical field [0001] The invention relates to the field of semiconductor devices, in particular to a light-emitting device based on graphene and polycyclic silver nano film electrodes and a preparation method thereof. Background technique [0002] Light emitting diodes (light emitting diodes, LEDs) are widely used in various fields such as daily lighting. However, when the light emitted by the LED chip exits the chip, a considerable part of the light is reflected by the interface between the chip and the outside world, resulting in a decrease in the luminous efficiency of the LED chip. Contents of the invention [0003] Aiming at the technical problems existing in the prior art, the present invention at least provides the following technical solutions: [0004] A light-emitting device based on graphene and polycyclic silver nano-film electrodes, which includes, [0005] Substrate; [0006] a buffer layer located on the upper surface of the substrate; [0007] N-type ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/40H01L33/42H01L33/64
CPCH01L33/005H01L33/40H01L33/405H01L33/42H01L33/64
Inventor 孙慧卿张盛郭志友
Owner SOUTH CHINA NORMAL UNIVERSITY